MOSFET. AFC5604 Datasheet

AFC5604 MOSFET. Datasheet pdf. Equivalent

AFC5604 Datasheet
Recommendation AFC5604 Datasheet
Part AFC5604
Description MOSFET
Feature AFC5604; Alfa-MOS Technology General Description AFC5604, N & P Pair enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFC5604 Datasheet




Alfa-MOS AFC5604
Alfa-MOS
Technology
General Description
AFC5604, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( TO-252-4L )
AFC5604
40V N & P Pair
Enhancement Mode MOSFET
Features
N-Channel
40V/15A,RDS(ON)= 20m@VGS=10V
40V/12A,RDS(ON)= 30m@VGS=4.5V
P-Channel
-40V/-15A,RDS(ON)= 38m@VGS= -10V
-40V/-12A,RDS(ON)= 54m@VGS= -4.5V
Application
DC/DC Conversion
Load Switch
DC FAN
Pin Define
Pin
1
2
3
4
5
Symbol
S1
G1
D1 / D2
S2
G2
Ordering Information
Part Ordering No.
Part Marking
Package
AFC5604T254RG
5604
TO-252-4L
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFC5604T254RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2012
Description
Source 1
Gate 1
Drain 1 / Drain 2
Source 2
Gate 2
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFC5604
Alfa-MOS
Technology
AFC5604
40V N & P Pair
Enhancement Mode MOSFET
Absolute Maximum Ratings ( N-Channel )
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
40
±20
8.0
6.0
20
1.5
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics ( N-Channel )
(TA=25к Unless otherwise noted)
Parameter
Symbol
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ID(on)
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=15A
VGS=4.5V,ID=12A
VDS=15V,ID=5.0A
IS=2A,VGS=0V
VDS=20V,VGS=4.5V
ID= 5A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=4
ID5.0A,VGEN=10V
RG=1
©Alfa-MOS Technology Corp.
Rev.A Jan. 2012
Min. Typ Max. Unit
40 V
1.0 3.0
±100 nA
1
10 uA
20 A
13
18
20
30
m
25 S
0.85 1.2 V
10 14
2.8 nC
3.2
850
110 pF
75
6 12
10
20
20
36
ns
6 12
www.alfa-mos.com
Page 2



Alfa-MOS AFC5604
Alfa-MOS
Technology
AFC5604
40V N & P Pair
Enhancement Mode MOSFET
Absolute Maximum Ratings ( P-Channel )
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-40
±20
-7.0
-6.0
-30
-1.7
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics ( P-Channel )
(TA=25к Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID= -250uA
VDS=VGS,ID= -250uA
VDS=0V,VGS= ±20V
VDS= -32V,VGS=0V
VDS= -32V,VGS=0V
TJ=85к
VDSЊʳˀ5V,VGS= -10V
VGS = -10V,ID=-15A
VGS = -4.5V,ID=-12A
VDS= -15V,ID= -5A
IS= -2A,VGS=0V
Qg
Qgs
Qgd
VDS=-20V,VGS=-4.5V
ID= -5.0A
Ciss
Coss
Crss
VDS=-20V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-20V,RL=4
ID-5.0A,VGEN=-4.5V
RG=1
©Alfa-MOS Technology Corp.
Rev.A Jan. 2012
Min.
-40
-1.0
-20
Typ
30
44
20
-0.8
13
4.5
6.5
1100
145
115
40
55
30
12
Max. Unit
-3.0
±100
-1
-20
38
54
-1.2
V
nA
uA
A
m
S
V
20
nC
pF
80
100
60
ns
20
www.alfa-mos.com
Page 3







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