MOSFET. AFC5616 Datasheet

AFC5616 MOSFET. Datasheet pdf. Equivalent

AFC5616 Datasheet
Recommendation AFC5616 Datasheet
Part AFC5616
Description MOSFET
Feature AFC5616; Alfa-MOS Technology General Description AFC5616, N & P Pair enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFC5616 Datasheet




Alfa-MOS AFC5616
Alfa-MOS
Technology
General Description
AFC5616, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( TO-252-4L )
AFC5616
60V N & P Pair
Enhancement Mode MOSFET
Features
N-Channel
60V/7.0A,RDS(ON)=34m@VGS=10V
60V/6.0A,RDS(ON)=40m@VGS=4.5V
P-Channel
-60V/-7A,RDS(ON)= 56m@VGS= -10V
-60V/-6A,RDS(ON)= 68m@VGS= -4.5V
Application
DC/DC Conversion
Load Switch
DC FAN
Pin Define
Pin
1
2
3
4
5
Symbol
S1
G1
D1 / D2
S2
G2
Ordering Information
Part Ordering No.
Part Marking
Package
AFC5616T254RG
5616
TO-252-4L
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFC5616T254RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Apr. 2016
Description
Source 1
Gate 1
Drain 1 / Drain 2
Source 2
Gate 2
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFC5616
Alfa-MOS
Technology
AFC5616
60V N & P Pair
Enhancement Mode MOSFET
Absolute Maximum Ratings ( N-Channel )
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
60
±20
7.0
6.0
30
1.5
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics ( N-Channel )
(TA=25к Unless otherwise noted)
Static
Parameter
Symbol
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ID(on)
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=7.0A
VGS=4.5V,ID=6.0A
VDS=15V,ID=5.3A
IS=2.0A,VGS=0V
VDS=30V,VGS=4.5V
ID23A
VDS=25V,VGS=0V
f=1MHz
VDD=30V,RL=1.3
ID23A,VGEN=10V
RG=1
©Alfa-MOS Technology Corp.
Rev.A Apr. 2016
Min. Typ Max. Unit
60 V
1.0 2.5
±100 nA
1
5 uA
30 A
25
30
34
40
m
24 S
0.8 1.3 V
7 15
3.2 nC
3.2
700
150 pF
70
10 20
15
30
30
65
ns
25 50
www.alfa-mos.com
Page 2



Alfa-MOS AFC5616
Alfa-MOS
Technology
AFC5616
60V N & P Pair
Enhancement Mode MOSFET
Absolute Maximum Ratings ( P-Channel )
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-60
±20
-7.0
-6.0
-30
-1.7
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics ( P-Channel )
(TA=25к Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Symbol
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ID(on)
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V,ID= -250uA
VDS=VGS,ID= -250uA
VDS=0V,VGS= ±20V
VDS= -48V,VGS=0V
VDS= -48V,VGS=0V
TJ=85к
VDSЊʳˀ5V,VGS= -10V
VGS = -10V,ID=-7A
VGS = -4.5V,ID=-6A
VDS= -15V,ID= -3.2A
IS= -3A,VGS=0V
VDS=-30V,VGS=-10V
ID= -10.0A
VDS=-25V,VGS=0V
f=1MHz
VDD=-30V,RL=3.0
ID-18A,VGEN=-10V
RG=2.5
©Alfa-MOS Technology Corp.
Rev.A Apr. 2016
Min.
-60
-1.0
-30
Typ
46
56
12
-0.8
25
5
8
1200
140
90
10
10
45
25
Max. Unit
-2.5
±100
-1
-20
56
68
-1.3
V
nA
uA
A
m
S
V
40
2000
20
20
80
40
nC
pF
ns
www.alfa-mos.com
Page 3







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