N-Channel MOSFET. AFN6098S Datasheet

AFN6098S MOSFET. Datasheet pdf. Equivalent

AFN6098S Datasheet
Recommendation AFN6098S Datasheet
Part AFN6098S
Description N-Channel MOSFET
Feature AFN6098S; Alfa-MOS Technology AFN6098S 60V N-Channel Enhancement Mode MOSFET General Description AFN6098S, N.
Manufacture Alfa-MOS
Datasheet
Download AFN6098S Datasheet




Alfa-MOS AFN6098S
Alfa-MOS
Technology
AFN6098S
60V N-Channel
Enhancement Mode MOSFET
General Description
AFN6098S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Features
60V/50A,RDS(ON)= 4m@VGS=10V
60V/25A,RDS(ON)= 6m@VGS=6V
Super high density cell design for extremely low RDS
(ON)
TO-262 package design
Pin Description ( TO-262 )
Application
Synchronous Rectifier
Power Supplies
Pin Define
Pin
1
2
3
Symbol
G
D
S
Ordering Information
Part Ordering No.
AFN6098ST262TG
Part Marking
6098S
AAAAAA
Package
TO-262
BBBBBB
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN6098ST262TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
Description
Gate
Drain
Source
Unit
Tube
Quantity
50 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN6098S
Alfa-MOS
Technology
AFN6098S
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Single Pulse Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TC=25к
TC=70к
TC=25к
TA=25к
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
PD
TJ
TSTG
RθJA
Typical
60
±20
90
45
150
80
40
100
3.1
150
-55/150
62.5
Unit
V
V
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=48V,VGS=0V
VDS=48V,VGS=0V
TJ=85к
VDSЊ10V,VGS=10V
VGS=10V,ID=50A
VGS=6V,ID=25A
VDS=10V,ID=40A
IS=30A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
ID20A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=1.5
ID20A,VGEN=10V
RG=3.0
Min. Typ Max. Unit
60 V
2.0 3.0 4.0
±100
1
30
nA
uA
80
2.8
3.8
80
A
4
6
m
S
0.8 1.3 V
100
30
45
3450
1100
400
30
30
40
15
150
6500
60
60
80
30
nC
pF
ns
www.alfa-mos.com
Page 2



Alfa-MOS AFN6098S
Alfa-MOS
Technology
Typical Characteristics
AFN6098S
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2016
www.alfa-mos.com
Page 3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)