P-Channel MOSFET. AFP1073 Datasheet

AFP1073 MOSFET. Datasheet pdf. Equivalent

AFP1073 Datasheet
Recommendation AFP1073 Datasheet
Part AFP1073
Description P-Channel MOSFET
Feature AFP1073; Alfa-MOS Technology General Description AFP1073, P-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFP1073 Datasheet




Alfa-MOS AFP1073
Alfa-MOS
Technology
General Description
AFP1073, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-723 )
AFP1073
20V P-Channel
Enhancement Mode MOSFET
Features
-20V/-0.45A, RDS(ON)= 620 mΩ@ VGS =-4.5V
-20V/-0.35A, RDS(ON)= 860 mΩ@ VGS =-2.5V
-20V/-0.25A, RDS(ON)= 1450 mΩ@ VGS =-1.8V
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SOT-723 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Smart Phones, Pagers
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP1073S72RG
X
SOT-723
AFP1073S52RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp.
Rev.A Nov. 2011
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
8000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP1073
Alfa-MOS
Technology
AFP1073
20V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Typical
-20
±12
-0.7
-0.4
-1.0
-0.3
0.27
0.16
-55/150
-55/150
Unit
V
V
A
A
A
W
Electrical Characteristics
(TA=25Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Nov. 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V
TJ=85
VDS5V,VGS=4.5V
VGS=-4.5V,ID=-0.6A
VGS=-2.5V,ID=-0.5A
VGS=-1.8V,ID=-0.4A
VDS=-10V,ID=-0.4A
IS=-0.15A,VGS=0V
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-10V,VGS=0V
f=1MHz
VDS=-10V,VGS=-4.5V
ID-0.25A
VDD=-10V,RL=30Ω
ID-0.2A,VGEN=-4.5V
RG=10Ω
Min. Typ Max. Unit
-20
V
-0.4 -1.0
±100
-1
-5
nA
uA
0.7 A
500
700
1000
620
860
1450
mΩ
1S
0.65 1.2 V
70 100
20 pF
10
1.0 1.3
0.1 nC
0.3
10 15
10 15 ns
40 60
30 50
www.alfa-mos.com
Page 2



Alfa-MOS AFP1073
Alfa-MOS
Technology
Typical Characteristics
AFP1073
20V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Nov. 2011
www.alfa-mos.com
Page 3







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