N-Channel MOSFET. AFN1072 Datasheet

AFN1072 MOSFET. Datasheet pdf. Equivalent

AFN1072 Datasheet
Recommendation AFN1072 Datasheet
Part AFN1072
Description N-Channel MOSFET
Feature AFN1072; Alfa-MOS Technology General Description AFN1072, N-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFN1072 Datasheet




Alfa-MOS AFN1072
Alfa-MOS
Technology
General Description
AFN1072, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-723 )
AFN1072
20V N-Channel
Enhancement Mode MOSFET
Features
20V/0.8A,RDS(ON)=360m@VGS=4.5V
20V/0.7A,RDS(ON)=420m@VGS=2.5V
20V/0.6A,RDS(ON)=560m@VGS=1.8V
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
SOT-723 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Smart Phones, Pagers
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1072S72RG
20
SOT-723
ϡʳ AFN1072S72RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.B Jan. 2011
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
8000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN1072
Alfa-MOS
Technology
AFN1072
20V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Typical
20
±12
0.7
0.4
1.0
0.3
0.27
0.16
-55/150
-55/150
Unit
V
V
A
A
A
W
к
к
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B Jan. 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=4.5V,ID=0.8A
VGS=2.5V,ID=0.7A
VGS=1.8V,ID=0.6A
VDS=10V,ID=0.4A
IS=0.15A,VGS=0V
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=10V,VGS=0V
f=1MHz
VDS=10V,VGS=4.5V
ID0.6A
VDD=10V,RL=20
ID0.5A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
20 V
0.4 1.0
±100 nA
1
5 uA
0.7 A
300 360
340 420 m
420 560
1S
0.65 1.2 V
70
20
8
1.06
0.18
0.32
18
20
70
25
pF
1.38
nC
26
28
110
ns
40
www.alfa-mos.com
Page 2



Alfa-MOS AFN1072
Alfa-MOS
Technology
Typical Characteristics
AFN1072
20V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.B Jan. 2011
www.alfa-mos.com
Page 3







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