N-Channel MOSFET. AFN1062KS Datasheet

AFN1062KS MOSFET. Datasheet pdf. Equivalent

AFN1062KS Datasheet
Recommendation AFN1062KS Datasheet
Part AFN1062KS
Description N-Channel MOSFET
Feature AFN1062KS; Alfa-MOS Technology General Description AFN1062KS, N-Channel enhancement mode MOSFET, uses Advanced .
Manufacture Alfa-MOS
Datasheet
Download AFN1062KS Datasheet




Alfa-MOS AFN1062KS
Alfa-MOS
Technology
General Description
AFN1062KS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-523 )
AFN1062KS
60V N-Channel
Enhancement Mode MOSFET
Features
60V/0.5A , RDS(ON)=2.4@VGS=10V
60V/0.3A , R DS(ON)=3.0@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
ESD Protection ( 2KV ) Diode design–in
SOT-523 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1062KSS52RG
K
SOT-523
ϡʳ K
Parts code
ϡʳ Y
Year code ( 0 ~ 9 )
ϡʳ W Week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN1062KSS52RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Dec. 2012
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN1062KS
Alfa-MOS
Technology
AFN1062KS
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
0.27
0.16
TJ
TSTG
RθJA
Typical
60
±20
0.35
0.25
0.65
0.45
0.27
0.16
-55/150
-55/150
2000
Unit
V
V
A
A
A
W
-55/150
-55/150
V
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Dec. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
TJ=85к
VGS=10V,ID=0.5A
VGS= 4.5V,ID=0.3A
VDS=10V,ID=0.2A
IS=0.2A,VGS=0V
Qg
Qgs
Qgd
VDS=10V,VGS=4.5V
ID0.25A
Ciss
Coss
Crss
VDS=25V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=30V,RL=150
ID0.2A,VGEN=-4.5V
RG=10
Min. Typ Max. Unit
60 V
1.0 2.0
3 uA
1
10 uA
1.2
1.6
2.4
3.0
0.2 S
0.75 1.4 V
400
110 pC
150
30
8 pF
5
10 20
35
20
50
30
ns
40 60
www.alfa-mos.com
Page 2



Alfa-MOS AFN1062KS
Alfa-MOS
Technology
Typical Characteristics
AFN1062KS
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2012
www.alfa-mos.com
Page 3







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