N-Channel MOSFET. AFN1024E Datasheet

AFN1024E MOSFET. Datasheet pdf. Equivalent

AFN1024E Datasheet
Recommendation AFN1024E Datasheet
Part AFN1024E
Description N-Channel MOSFET
Feature AFN1024E; Alfa-MOS Technology General Description AFN1024E, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN1024E Datasheet




Alfa-MOS AFN1024E
Alfa-MOS
Technology
General Description
AFN1024E, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-563 )
AFN1024E
20V N-Channel
Enhancement Mode MOSFET
Features
20V/0.6A,RDS(ON)=360m@VGS=4.5V
20V/0.5A,RDS(ON)=420m@VGS=2.5V
20V/0.4A,RDS(ON)=560m@VGS=1.8V
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
ESD Protected
SOT-563 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Smart Phones, Pagers
Pin Define
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1024ES56RG
B
SOT-563
ϡʳ AFN1024ES56RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN1024E
Alfa-MOS
Technology
AFN1024E
20V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Typical
20
±12
0.7
0.4
1.0
0.3
0.27
0.16
-55/150
-55/150
Unit
V
V
A
A
A
W
к
к
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=16V,VGS=0V
VDS=16V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=4.5V,ID=0.6A
VGS=2.5V,ID=0.5A
VGS=1.8V,ID=0.4A
VDS=10V,ID=0.4A
IS=0.15A,VGS=0V
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=10V,VGS=0V
f=1MHz
VDS=10V,VGS=4.5V
ID0.6A
VDD=10V,RL=20
ID0.5A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
20 V
0.3 0.8
±1 mA
1
5 uA
0.7 A
240 360
300 420 m
420 560
1S
0.8 1.2 V
70
20
8
1.06
0.18
0.32
18
20
70
25
pF
1.38
nC
26
28
110
ns
40
www.alfa-mos.com
Page 2



Alfa-MOS AFN1024E
Alfa-MOS
Technology
Typical Characteristics
AFN1024E
20V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 3







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