N-Channel MOSFET. AFN1026S Datasheet

AFN1026S MOSFET. Datasheet pdf. Equivalent

AFN1026S Datasheet
Recommendation AFN1026S Datasheet
Part AFN1026S
Description N-Channel MOSFET
Feature AFN1026S; Alfa-MOS Technology AFN1026S 60V N-Channel Enhancement Mode MOSFET 1jGeneral Description AFN1026S,.
Manufacture Alfa-MOS
Datasheet
Download AFN1026S Datasheet




Alfa-MOS AFN1026S
Alfa-MOS
Technology
AFN1026S
60V N-Channel
Enhancement Mode MOSFET
1jGeneral Description
AFN1026S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, such as smart phone and
notebook computer, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Pin Description ( SOT-563 )
Features
60V/0.5A , RDS(ON)=2.4@VGS=10V
60V/0.2A , RDS(ON)=3.0@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
ESD Protection ( >2KV ) Diode design–in
SOT-563 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Smart Phones, Pagers
Pin Define
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1026SS56RG
D
SOT-563
ϡʳ AFN1026SS56RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2014
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN1026S
Alfa-MOS
Technology
AFN1026S
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Typical
60
±20
0.35
0.23
0.65
0.25
0.25
0.15
-55/150
-55/150
Unit
V
V
A
A
A
W
к
к
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
TJ=85к
VGS=10V,ID=0.5A
VGS= 4.5V,ID=0.2A
VDS=10V,ID=0.2A
IS=0.2A,VGS=0V
Qg
Qgs
Qgd
VDS=10V,VGS=4.5V
ID0.25A
Ciss
Coss
Crss
VDS=25V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=30V,RL=150
ID0.2A,VGEN=10V
RG=10
Min. Typ Max. Unit
60 V
1.0 2.0
3 uA
1
10 uA
1.2
1.7
2.4
3.0
0.2 S
0.75 1.4 V
450
110 pC
150
30
8 pF
5
4 10
5
12
15
20
ns
10 20
www.alfa-mos.com
Page 2



Alfa-MOS AFN1026S
Alfa-MOS
Technology
Typical Characteristics
AFN1026S
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Jan. 2014
www.alfa-mos.com
Page 3







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