N-Channel MOSFET. AFN3486W Datasheet

AFN3486W MOSFET. Datasheet pdf. Equivalent

AFN3486W Datasheet
Recommendation AFN3486W Datasheet
Part AFN3486W
Description N-Channel MOSFET
Feature AFN3486W; Alfa-MOS Technology AFN3486W 110V N-Channel Enhancement Mode MOSFET General Description AFN3486W, .
Manufacture Alfa-MOS
Datasheet
Download AFN3486W Datasheet




Alfa-MOS AFN3486W
Alfa-MOS
Technology
AFN3486W
110V N-Channel
Enhancement Mode MOSFET
General Description
AFN3486W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone
and notebook computer and other battery powered
circuits, and low in-line power loss are needed in
commercial industrial surface mount applications.
Pin Description ( SOT-23-6L )
Features
105V/3.0A,RDS(ON)=315m@VGS=10V
105V/2.0A,RDS(ON)=295m@VGS=10V
105V/2.0A,RDS(ON)=300m@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-6L package design
Application
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
Pin Define
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3486WS26RG
86WYW
SOT-23-6L
ϡʳ 86W parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
©Alfa-MOS Technology Corp.
Rev.B Mar. 2016
Description
Drain
Drain
Gate
Source
Drain
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN3486W
Alfa-MOS
Technology
AFN3486W
110V N-Channel
Enhancement Mode MOSFET
ϡʳ AFN3486WS26RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25к
Tc=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
105
±20
2.0
2.0
10
1.6
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B Mar. 2016
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=3.0A
VGS=10V,ID=2.0A
VGS=4.5V,ID=2.0A
VDS=20V,ID=1.5A
IS=1.3A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=4.5V
ID1.6A
VDS=50V,VGS=0V
f=1MHz
VDD=50V,RL=39
ID1.3A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
105 V
1.0 2.5
±100
1
10
nA
uA
10 A
295 315
270 295 m
282 300
2S
0.85 1.2 V
2.8
0.75
1.4
200
22
13
25
20
15
10
5.8
nC
pF
50
50
30
ns
25
www.alfa-mos.com
Page 2



Alfa-MOS AFN3486W
Alfa-MOS
Technology
Typical Characteristics
AFN3486W
110V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.B Mar. 2016
www.alfa-mos.com
Page 3







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