NP-Channel MOSFET. AFC6606W Datasheet

AFC6606W MOSFET. Datasheet pdf. Equivalent

AFC6606W Datasheet
Recommendation AFC6606W Datasheet
Part AFC6606W
Description N&P-Channel MOSFET
Feature AFC6606W; Alfa-MOS Technology AFC6606W 60V N & P Pair Enhancement Mode MOSFET General Description AFC6606W, .
Manufacture Alfa-MOS
Datasheet
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Alfa-MOS AFC6606W
Alfa-MOS
Technology
AFC6606W
60V N & P Pair
Enhancement Mode MOSFET
General Description
AFC6606W, N & P Pair enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial
industrial surface mount applications.
Pin Description ( SOT-23-6L )
Features
N-Channel
60V/2.8A,RDS(ON)=135m@VGS=10V
60V/2.0A,RDS(ON)=145m@VGS=4.5V
P-Channel
-60V/-1.8A,RDS(ON)=310m@VGS=-10V
-60V/-1.4A,RDS(ON)=340m@VGS=-4.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-23-6L package design
Application
LED Backlight
DC/DC Converter
Load Switch for Portable Applications
Pin Define
Pin
1
2
3
4
5
6
Symbol
G1
S2
G2
D2
S1
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFC6606WS26RG
06WYW
SOT-23-6L
ϡʳ 06W parts code
ϡʳ Y
year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFC6606WS26RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A June 2014
Description
Gate 1
Source 2
Gate 2
Drain 2
Source 1
Drain1
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFC6606W
Alfa-MOS
Technology
AFC6606W
60V N & P Pair
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
N-Channel
P-Channel
60 -60
±20 ±20
-2.8 -1.8
-2.0 -1.4
-8 -8
-1.5 -1.5
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics ( N-Channel )
(TA=25к Unless otherwise noted)
Static
Parameter
Symbol
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ID(on)
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=48V,VGS=0V
VDS=48V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=2.8A
VGS=4.5V,ID=2.0A
VDS=15V,ID=2.0A
IS=2.5A,VGS=0V
VDS=30V,VGS=4.5V
ID2.0A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=20
ID1.5A,VGEN=10V
RG=1
Min. Typ Max. Unit
60 V
0.7 2.5
±100 nA
1
10 uA
5A
115
125
135
145
m
5S
0.85 1.2 V
2.5 3.5
0.8 nC
1.0
200
20 pF
10
48
10
10
20
40
ns
6 10
©Alfa-MOS Technology Corp.
Rev.A June 2014
www.alfa-mos.com
Page 2



Alfa-MOS AFC6606W
Alfa-MOS
Technology
AFC6606W
60V N & P Pair
Enhancement Mode MOSFET
Electrical Characteristics ( P-Channel )
(TA=25к Unless otherwise noted)
Static
Parameter
Symbol
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ID(on)
RDS(on)
gFS
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-48V,VGS=0V
VDS=-48V,VGS=0V
TJ=85к
VDSЉ-5V,VGS=-10V
VGS=-10V,ID=-1.8A
VGS=-4.5V,ID=-1.4A
VDS=-10V,ID=-1.0A
IS=-1.0A,VGS=0V
VDS=-30V,VGS=-4.5V
ID-1.25A
VDS=-30V,VGS=0V
f=1MHz
VDD=-30V,RL=30
ID-1.0A,VGEN=-10V
RG=1.0
Min. Typ Max. Unit
-60 V
-1.0 -2.0
±100 nA
-1
-30 uA
-6 A
280
295
310
340
m
2.8 S
-0.75 -1.3 V
2.7 4.5
0.7 nC
1.2
210
25 pF
18
5 10
10
15
20
30
ns
10 20
©Alfa-MOS Technology Corp.
Rev.A June 2014
www.alfa-mos.com
Page 3







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