P-Channel MOSFET. AFP3447W Datasheet

AFP3447W MOSFET. Datasheet pdf. Equivalent

AFP3447W Datasheet
Recommendation AFP3447W Datasheet
Part AFP3447W
Description P-Channel MOSFET
Feature AFP3447W; Alfa-MOS Technology General Description AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFP3447W Datasheet




Alfa-MOS AFP3447W
Alfa-MOS
Technology
General Description
AFP3447W, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-6L )
AFP3447W
120V P-Channel
Enhancement Mode MOSFET
Features
-120V/-1.0A,RDS(ON)=1.5@VGS=-10V
-120V/-0.5A,RDS(ON)=1.7@VGS=-4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
ESD Protection Design
SOT-23-6L package design
Application
Active Clamp Circuits in DC/DC Power Supplies
Pin Define
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
Description
Drain
Drain
Gate
Source
Drain
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3447WS26RG
47WYW
SOT-23-6L
ϡʳ 47W parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP3447WS26RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2014
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP3447W
Alfa-MOS
Technology
AFP3447W
120V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25к
Tc=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-120
±20
-1.0
-0.5
-1.2
-1.2
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=-100V,VGS=0V
VDS=-100V,VGS=0V
TJ=85к
VDSЊ-10V,VGS=-10V
VGS=-10V,ID=-1.0A
VGS=-4.5V,ID=-0.5A
VDS=-10V,ID=-1.0A
IS=-1.0A,VGS=0V
Qg
Qgs
Qgd
VDS=-75V,VGS=-6V
ID-1.0A
Ciss
Coss
Crss
VDS=250V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-75V,RL=75
ID-1.0A,VGEN=-10V
RG=1.0
Min. Typ Max. Unit
-120
-1.0
V
-2.0
±10 uA
-1
-30 uA
-1.2 A
1.25
1.40
1.5
1.7
4.5 S
-0.75 -1.2 V
8 12
2 nC
4
380
30 pF
20
10 20
12
25
25
50
ns
12 25
www.alfa-mos.com
Page 2



Alfa-MOS AFP3447W
Alfa-MOS
Technology
Typical Characteristics
AFP3447W
120V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2014
www.alfa-mos.com
Page 3







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