AFP3056WS

Alfa-MOS Technology General Description AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3056WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=55mΩ@VGS=-10.0V -30V/-4.0A,RDS(ON)=70mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP3056WSS26RG 56WYW SOT-23-6L ϡʳ 56W parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z ...