Power-Transistor. 670N25NF Datasheet

670N25NF Power-Transistor. Datasheet pdf. Equivalent

670N25NF Datasheet
Recommendation 670N25NF Datasheet
Part 670N25NF
Description Power-Transistor
Feature 670N25NF; BSC670N25NSFD MOSFET OptiMOSTM3Power-Transistor,250V Features •N-channel,normallevel •175°C.
Manufacture Infineon
Datasheet
Download 670N25NF Datasheet




Infineon 670N25NF
BSC670N25NSFD
MOSFET
OptiMOSTM3Power-Transistor,250V
Features
•N-channel,normallevel
•175°Crated
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
•Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 250 V
RDS(on),max
67
m
ID 24 A
SuperSO8
8 7 65
56 78
1
23
4
4321
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSC670N25NSFD
Package
PG-TDSON-8
Marking
670N25NF
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-12-05



Infineon 670N25NF
OptiMOSTM3Power-Transistor,250V
BSC670N25NSFD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2 Rev.2.1,2016-12-05



Infineon 670N25NF
OptiMOSTM3Power-Transistor,250V
BSC670N25NSFD
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Reversediodedv/dt
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
dv/dt
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
- 24
- 19
- 96
- 69
- 60
- 20
- 150
- 175
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=16A,RGS=25
kV/µs
ID=46A,VDS=125V,
di/dt=1500A/µs,Tj,max=175°C
V-
W TC=25°C
°C -
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction
minimal footprint
- ambient, RthJA
Thermal resistance, junction
6 cm2 cooling area2)
- ambient, RthJA
Min.
-
Values
Typ. Max.
0.6 1
Unit Note/TestCondition
K/W -
- - 75 K/W -
- - 50 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
250
2
-
-
-
-
-
24
Values
Typ. Max.
--
34
0.1 1
10 100
1 100
59 67
3.3 5
47 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=90µA
µA
VDS=200V,VGS=0V,Tj=25°C
VDS=200V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mVGS=10V,ID=24A
-
S |VDS|>2|ID|RDS(on)max,ID=24A
1) See Diagram 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3 Rev.2.1,2016-12-05







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