Mode MOSFET. AFN1306 Datasheet

AFN1306 MOSFET. Datasheet pdf. Equivalent

AFN1306 Datasheet
Recommendation AFN1306 Datasheet
Part AFN1306
Description N-Channel Enhancement Mode MOSFET
Feature AFN1306; Alfa-MOS Technology General Description AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFN1306 Datasheet




Alfa-MOS AFN1306
Alfa-MOS
Technology
General Description
AFN1306, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-323 )
AFN1306
30V N-Channel
Enhancement Mode MOSFET
Features
30V/1.5A,RDS(ON)=430m@VGS=4.5V
30V/1.2A,RDS(ON)=580m@VGS=2.5V
30V/0.6A,RDS(ON)=860m@VGS=1.8V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 package design
Application
Net Working System
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Smart Phones, Pagers
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1306S32RG
06YW
SOT-323
ϡʳ 06 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN1306S32RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A July 2011
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN1306
Alfa-MOS
Technology
AFN1306
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±12
1.0
0.6
6
1
0.35
0.22
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A July 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=4.5V,ID=1.5A
VGS=2.5V,ID=1.2A
VGS=1.8V,ID=0.6A
VDS=10V,ID=1.0A
IS=1.0A,VGS=0V
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=15V,VGS=0V
f=1MHz
VDS=15V,VGS=4.5V
ID1.2A
VDD=15V,RL=20
ID1.2A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
30 V
0.5 1.0
±100
1
5
nA
uA
1.8 A
380 430
500 580 m
760 860
1S
0.65 1.2 V
85
25 pF
15
1.4 1.8
0.3 nC
0.6
15 25
25
15
45
25
ns
10 20
www.alfa-mos.com
Page 2



Alfa-MOS AFN1306
Alfa-MOS
Technology
Typical Characteristics
AFN1306
30V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A July 2011
www.alfa-mos.com
Page 3







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