Mode MOSFET. AFN1330S Datasheet

AFN1330S MOSFET. Datasheet pdf. Equivalent

AFN1330S Datasheet
Recommendation AFN1330S Datasheet
Part AFN1330S
Description N-Channel Enhancement Mode MOSFET
Feature AFN1330S; Alfa-MOS Technology General Description AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN1330S Datasheet




Alfa-MOS AFN1330S
Alfa-MOS
Technology
General Description
AFN1330S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-323 )
AFN1330S
60V N-Channel
Enhancement Mode MOSFET
Features
60V/0.5A , RDS(ON)=7.5@VGS=10V
60V/0.05A , R DS(ON)=7.5@VGS=5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
ESD Protection ( 1KV ) Diode design–in
SOT-323 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1330SS32RG
6CM
SOT-323
ϡʳ 6C Parts code
ϡʳ M
Month code
ϡʳ AFN1330SS32RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2013
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN1330S
Alfa-MOS
Technology
AFN1330S
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
60
±20
0.115
0.075
0.8
0.115
225
150
-55/150
417
Unit
V
V
A
A
A
mW
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
TJ=85к
VGS=10V,ID=0.5A
VGS= 5V,ID=0.05A
VDS=10V,ID=0.2A
IS=0.115A,VGS=0V
60 V
1.0 1.6 2.0
3 uA
1
10 uA
1.4
1.8
7.5
7.5
80 mS
1.5 V
Ciss
Coss
Crss
td(on)
td(off)
VDS=25V,VGS=0V
f=1MHz
VDD=25V,RL=50
ID0.5A,VGEN=10V,RG=25
17 50
10 25 pF
35
7
11
20
40
ns
©Alfa-MOS Technology Corp.
Rev.A Jan. 2013
www.alfa-mos.com
Page 2



Alfa-MOS AFN1330S
Alfa-MOS
Technology
Typical Characteristics
AFN1330S
60V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Jan. 2013
www.alfa-mos.com
Page 3







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