N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-223 )
AFN8459
30V N-Channel Enhancement Mode MOSFET
Features
30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3
Symbol G D S
Description Gate Drain Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFN8459S223RG
8459
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFN8459S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jun. 2011
Unit Tape & Reel
Quantity 2500 EA
www.alfa-mos.com
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