P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-223 )
AFP8483
100V P-Channel Enhancement Mode MOSFET
Features
-100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design
Application
Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter
Pin Define
Pin 1 2 3
Symbol G D S
Description Gate Drain Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8483S223RG
8483
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFP8483S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
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