Mode MOSFET. AFP8483 Datasheet

AFP8483 MOSFET. Datasheet pdf. Equivalent

AFP8483 Datasheet
Recommendation AFP8483 Datasheet
Part AFP8483
Description P-Channel Enhancement Mode MOSFET
Feature AFP8483; Alfa-MOS Technology General Description AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFP8483 Datasheet




Alfa-MOS AFP8483
Alfa-MOS
Technology
General Description
AFP8483, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-223 )
AFP8483
100V P-Channel
Enhancement Mode MOSFET
Features
-100V/-3.8A,RDS(ON)= 260m@VGS= -10V
-100V/-2.6A,RDS(ON)= 290m@VGS= -4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-223 package design
Application
Motor and Load Control
LCD TV Inverter & AD/DC Inverter Systems.
Backlight Inverter for LCD Display
Load Switch
CCFL Inverter
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8483S223RG
8483
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFP8483S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev. A Apr. 2013
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP8483
Alfa-MOS
Technology
AFP8483
100V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-100
±20
-3.8
-2.6
-15
-5
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev. A Apr. 2013
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID= -250uA
VDS=VGS,ID= -250uA
VDS=0V,VGS= ±20V
VDS= -80V,VGS=0V
VDS= -80V,VGS=0V
TJ=85к
VDSЊʳˀ˄ ˃ V,VGS= -10V
VGS = -10V,ID=-3.8A
VGS = -4.5V,ID=-2.6A
VDS= -15V,ID= -3.2A
IS= -2A,VGS=0V
Qg
Qgs
Qgd
VDS=-50V,VGS=-4.5V
ID= -2.6A
Ciss
Coss
Crss
VDS=-50V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-50V,RL=17
ID-2.6A,VGEN=-10V
RG=1
Min. Typ Max. Unit
-100
-1.0
-2.5
±100
-1
-30
V
nA
uA
-8 A
235
255
260
290
m
12 S
-0.8 -1.3 V
12 20
3.0 nC
4.5
1100
70 pF
45
8 15
15
35
20
50
ns
10 25
www.alfa-mos.com
Page 2



Alfa-MOS AFP8483
Alfa-MOS
Technology
Typical Characteristics
AFP8483
100V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev. A Apr. 2013
www.alfa-mos.com
Page 3







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