Mode MOSFET. AFP8463 Datasheet

AFP8463 MOSFET. Datasheet pdf. Equivalent

AFP8463 Datasheet
Recommendation AFP8463 Datasheet
Part AFP8463
Description P-Channel Enhancement Mode MOSFET
Feature AFP8463; Alfa-MOS Technology General Description AFP8463, P-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFP8463 Datasheet




Alfa-MOS AFP8463
Alfa-MOS
Technology
General Description
AFP8463, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-223 )
AFP8463
40V P-Channel
Enhancement Mode MOSFET
Features
-40V/-6.0A,RDS(ON)= 46m@VGS= -10V
-40V/-4.2A,RDS(ON)= 62m@VGS= -4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-223 package design
Application
Motor and Load Control
LCD TV Inverter & AD/DC Inverter Systems.
Backlight Inverter for LCD Display
Load Switch
CCFL Inverter
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8463S223RG
8463
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFP8463S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev. A May 2011
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP8463
Alfa-MOS
Technology
AFP8463
40V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-40
±20
-6.0
-4.2
-10
-1.6
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev. A May 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID= -250uA
VDS=VGS,ID= -250uA
VDS=0V,VGS= ±20V
VDS= -40V,VGS=0V
VDS= -40V,VGS=0V
TJ=85к
VDSЊʳˀ5V,VGS= -10V
VGS = -10V,ID=-6.0A
VGS = -4.5V,ID=-4.2A
VDS= -15V,ID= -5A
IS= -2A,VGS=0V
Qg
Qgs
Qgd
VDS=-20V,VGS=-4.5V
ID= -3.0A
Ciss
Coss
Crss
VDS=-20V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-20V,RL=4
ID-3.0A,VGEN=-4.5V
RG=1
Min. Typ Max. Unit
-40
-1.0
-3.0 V
±100 nA
-1
-20 uA
-20 A
40
55
46
62
m
20 S
-0.8 -1.2 V
13 20
4.5 nC
6.5
1100
145 pF
115
40 80
55
30
100
60
ns
12 20
www.alfa-mos.com
Page 2



Alfa-MOS AFP8463
Alfa-MOS
Technology
Typical Characteristics
AFP8463
40V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev. A May 2011
www.alfa-mos.com
Page 3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)