Mode MOSFET. AFP8451 Datasheet

AFP8451 MOSFET. Datasheet pdf. Equivalent

AFP8451 Datasheet
Recommendation AFP8451 Datasheet
Part AFP8451
Description P-Channel Enhancement Mode MOSFET
Feature AFP8451; Alfa-MOS Technology General Description AFP8451, P-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFP8451 Datasheet




Alfa-MOS AFP8451
Alfa-MOS
Technology
General Description
AFP8451, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-223 )
AFP8451
60V P-Channel
Enhancement Mode MOSFET
Features
-60V/-3.0A,RDS(ON)=305m@VGS=-10V
-60V/-2.0A,RDS(ON)=330m@VGS=-4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-223 package design
Application
Motor and Load Control
LCD TV Inverter & AD/DC Inverter Systems.
Backlight Inverter for LCD Display
Load Switch
CCFL Inverter
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8451S223RG
8451
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFP8451S223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Sep. 2012
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP8451
Alfa-MOS
Technology
AFP8451
60V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-60
±20
-3.0
-2.0
-6
-1.6
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Sep. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-48V,VGS=0V
VDS=-48V,VGS=0V
TJ=85к
VDSЉ-5V,VGS=-10V
VGS=-10V,ID=-3.0A
VGS=-4.5V,ID=-2.0A
VDS=-10V,ID=-1.0A
IS=-1.0A,VGS=0V
Qg
Qgs
Qgd
VDS=-30V,VGS=-4.5V
ID-1.25A
Ciss
Coss
Crss
VDS=-30V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-30V,RL=30
ID-1.0A,VGEN=-10V
RG=1.0
Min. Typ Max. Unit
-60 V
-1.0 -2.0
±100 nA
-1
-30 uA
-6 A
289
307
305
330
m
2.8 S
-0.75 -1.5 V
2.7 4.5
0.7 nC
1.2
210
25 pF
18
5 10
10
15
20
30
ns
10 20
www.alfa-mos.com
Page 2



Alfa-MOS AFP8451
Alfa-MOS
Technology
Typical Characteristics
AFP8451
60V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Sep. 2012
www.alfa-mos.com
Page 3







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