Mode MOSFET. AFP8434S Datasheet

AFP8434S MOSFET. Datasheet pdf. Equivalent

AFP8434S Datasheet
Recommendation AFP8434S Datasheet
Part AFP8434S
Description P-Channel Enhancement Mode MOSFET
Feature AFP8434S; Alfa-MOS Technology General Description AFP8434S, P-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFP8434S Datasheet




Alfa-MOS AFP8434S
Alfa-MOS
Technology
General Description
AFP8434S, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-223 )
AFP8434S
20V P-Channel
Enhancement Mode MOSFET
Features
-20V/-6.0A,RDS(ON)=50m@VGS=4.5V
-20V/-4.0A,RDS(ON)=67m@VGS=2.5V
-20V/-2.0A,RDS(ON)=90m@VGS=1.8V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-223 package design
Application
Low Dropout Regulator
DC/DC converter
Load switch
Motor driving
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFP8434SS223RG
8434S
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFP8434SS223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2014
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP8434S
Alfa-MOS
Technology
AFP8434S
20V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-20
±12
-6.0
-4.0
-20
-1.5
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V
TA=85к
VDSЉ-5V,VGS=-4.5V
VGS=-4.5V,ID=-6.0A
VGS=-2.5V,ID=-4.0A
VGS=-1.8V,ID=-2.0A
VDS=-10V,ID=-6.0A
IS=-2.0A,VGS=0V
Qg
Qgs
Qgd
VDS=-10V,VGS=-4.5V
ID-6.0A
Ciss
Coss
Crss
VDS=-10V,VGS=0V
f=1MHz
td(on)
tr
td(off)
VDD=-5V, VGEN=-4.5V
ID-1.0A, RG=6
tf
Min. Typ Max. Unit
-20 V
-0.5 -0.7 -1.0
±100
-1
-30
nA
uA
-20 A
40 50
52 67 m
75 90
7S
-0.7 -1.3 V
12 20
1.9 nC
3.2
1185
235 pF
100
10 20
15
45
30
90
ns
25 50
www.alfa-mos.com
Page 2



Alfa-MOS AFP8434S
Alfa-MOS
Technology
Typical Characteristics
AFP8434S
20V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2014
www.alfa-mos.com
Page 3







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