Mode MOSFET. AFN8987W Datasheet

AFN8987W MOSFET. Datasheet pdf. Equivalent

AFN8987W Datasheet
Recommendation AFN8987W Datasheet
Part AFN8987W
Description N-Channel Enhancement Mode MOSFET
Feature AFN8987W; Alfa-MOS Technology General Description AFN8987W, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN8987W Datasheet




Alfa-MOS AFN8987W
Alfa-MOS
Technology
General Description
AFN8987W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-89-3L )
AFN8987W
80V N-Channel
Enhancement Mode MOSFET
Features
80V/4.6A,RDS(ON)=75m@VGS=10V
80V/3.6A,RDS(ON)=85m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-89-3L package design
Application
Motor and Load Control
Power Management in White LED System
Push Pull Converter
LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFN8987WS89RG
87YW
SOT-89-3L
ϡʳ 87 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN8987WS89RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
Unit
Tape & Reel
Quantity
1000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN8987W
Alfa-MOS
Technology
AFN8987W
80V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
90
±20
4.6
3.6
10
1.6
1.45
0.6
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=4.8A
VGS=4.5V,ID=3.6A
VDS=15V,ID=5.3A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=5V
ID3A
VDS=50V,VGS=0V
f=1MHz
VDD=50V,RL=12.5
ID3.0A,VGEN=10V
RG=1.0
Min. Typ Max. Unit
80 V
1.0 2.5
±100 nA
1
5 uA
10 A
61
68
75
85
m
24 S
0.8 1.2 V
12 18
4.2 nC
5.2
600
90 pF
60
15 25
15
20
25
30
ns
15 25
www.alfa-mos.com
Page 2



Alfa-MOS AFN8987W
Alfa-MOS
Technology
Typical Characteristics
AFN8987W
80V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
www.alfa-mos.com
Page 3







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