N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-89-3L )
AFN8918
40V N-Channel Enhancement Mode MOSFET
Features
40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design
Application
Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin 1 2 3
Symbol G D S
Description Gate Drain Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFN8918S89RG
18YW
SOT-89-3L
ϡʳ 18 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN8918S89RG : 7” Tape & Reel ; Pb...
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