Mode MOSFET. AFN8904 Datasheet

AFN8904 MOSFET. Datasheet pdf. Equivalent

AFN8904 Datasheet
Recommendation AFN8904 Datasheet
Part AFN8904
Description N-Channel Enhancement Mode MOSFET
Feature AFN8904; Alfa-MOS Technology General Description AFN8904, N-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFN8904 Datasheet




Alfa-MOS AFN8904
Alfa-MOS
Technology
General Description
AFN8904, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-89-3L )
AFN8904
30V N-Channel
Enhancement Mode MOSFET
Features
30V/5.6A,RDS(ON)=72m@VGS=10V
30V/3.6A,RDS(ON)=95m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-89-3L package design
Application
Motor and Load Control
Power Management in White LED System
DC-DC System
LCD Panel
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFN8904S89RG
04YW
SOT-89-3L
ϡʳ 04 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN8904S89RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev. B Dec. 2010
Unit
Tape & Reel
Quantity
1000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN8904
Alfa-MOS
Technology
AFN8904
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
5.6
3.6
10
1.6
1.45
0.6
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev. B Dec. 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=30V,VGS=0V
VDS=30V,VGS=0V
TJ=85к
VDSЊˇ ˁ 5V,VGS=10V
VGS=10V,ID=5.6A
VGS=4.5V,ID=3.6A
VDS=15V,ID=4.8A
IS=2.7A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID3.2A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=5.6
ID3.2A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
30 V
1.0 2.5
±100
1
30
nA
uA
6A
62
85
72
95
m
11 S
0.8 1.2 V
2.0
0.8
0.65
230
50
20
10
45
12
20
3.6
nC
pF
12
60
18
ns
30
www.alfa-mos.com
Page 2



Alfa-MOS AFN8904
Alfa-MOS
Technology
Typical Characteristics
AFN8904
30V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev. B Dec. 2010
www.alfa-mos.com
Page 3







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