Mode MOSFET. AFN2326BS Datasheet

AFN2326BS MOSFET. Datasheet pdf. Equivalent

AFN2326BS Datasheet
Recommendation AFN2326BS Datasheet
Part AFN2326BS
Description N-Channel Enhancement Mode MOSFET
Feature AFN2326BS; Alfa-MOS Technology General Description AFN2326BS, N-Channel enhancement mode MOSFET, uses Advanced .
Manufacture Alfa-MOS
Datasheet
Download AFN2326BS Datasheet




Alfa-MOS AFN2326BS
Alfa-MOS
Technology
General Description
AFN2326BS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFN2326BS
150V N-Channel
Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=350m@VGS=10V
150V/1.0A,RDS(ON)=400m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Application
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2326BSS23RG
26BYW
SOT-23-3L
ϡʳ 26B parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN2326BSS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Nov. 2016
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN2326BS
Alfa-MOS
Technology
AFN2326BS
150V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25к
Tc=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
150
±20
2.5
1.5
6
4
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Nov. 2016
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=100V,VGS=0V
VDS=100V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=1.5A
VGS=4.5V,ID=1.0A
VDS=15V,ID=1.5A
IS=1.7A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=75V,VGS=10V
ID1.5A
VDS=50V,VGS=0V
f=1MHz
VDD=75V,RL=75
ID1.0A,VGEN=10V
RG=6
Min. Typ Max. Unit
150
1.0 1.8
V
2.5
±100 nA
1
10 uA
5A
280
320
350
400
m
4.1 S
0.85 1.2 V
5.5 10
1.2 nC
2.0
400
20 pF
15
10 20
10
25
20
50
ns
15 30
www.alfa-mos.com
Page 2



Alfa-MOS AFN2326BS
Alfa-MOS
Technology
Typical Characteristics
AFN2326BS
150V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Nov. 2016
www.alfa-mos.com
Page 3







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