N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFN2326S
150V N-Channel Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=320mΩ@VGS=10V 150V/1.4A,RDS(ON)=340mΩ@VGS=6V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23-3L package design
Application
DC/DC Converters Load Switch
LED Backlighting in LCD TVs
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2326SS23RG
26SYW
SOT-23-3L
※ 26S parts code
※ Y year ...
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