Mode MOSFET. AFN2326S Datasheet

AFN2326S MOSFET. Datasheet pdf. Equivalent

AFN2326S Datasheet
Recommendation AFN2326S Datasheet
Part AFN2326S
Description N-Channel Enhancement Mode MOSFET
Feature AFN2326S; Alfa-MOS Technology General Description AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN2326S Datasheet




Alfa-MOS AFN2326S
Alfa-MOS
Technology
General Description
AFN2326S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFN2326S
150V N-Channel
Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=320mΩ@VGS=10V
150V/1.4A,RDS(ON)=340mΩ@VGS=6V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Application
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2326SS23RG
26SYW
SOT-23-3L
26S parts code
Y year code ( 0 ~ 9 )
W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
AFN2326SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp.
Rev.A Dec. 2015
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN2326S
Alfa-MOS
Technology
AFN2326S
150V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25
Tc=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
150
±20
1.5
1.1
6
4
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Dec. 2015
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=120V,VGS=0V
VDS=100V,VGS=0V
TJ=85
VDS5V,VGS=4.5V
VGS=10V,ID=1.5A
VGS=6V,ID=1.4A
VDS=15V,ID=1.5A
IS=1.7A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=75V,VGS=10V
ID1.5A
VDS=50V,VGS=0V
f=1MHz
VDD=75V,RL=75Ω
ID1.0A,VGEN=10V
RG=6Ω
Min. Typ Max. Unit
150
V
2.0 4.0
±100 nA
1
uA
10
5A
245
265
320
340
mΩ
4.1 S
0.85 1.2 V
5.5 10
1.2 nC
2.0
400
20 pF
15
10 20
10
25
20
50
ns
15 30
www.alfa-mos.com
Page 2



Alfa-MOS AFN2326S
Alfa-MOS
Technology
Typical Characteristics
AFN2326S
150V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2015
www.alfa-mos.com
Page 3







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