Mode MOSFET. AFN2354 Datasheet

AFN2354 MOSFET. Datasheet pdf. Equivalent

AFN2354 Datasheet
Recommendation AFN2354 Datasheet
Part AFN2354
Description N-Channel Enhancement Mode MOSFET
Feature AFN2354; Alfa-MOS Technology General Description AFN2354, N-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFN2354 Datasheet




Alfa-MOS AFN2354
Alfa-MOS
Technology
General Description
AFN2354, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFN2354
100V N-Channel
Enhancement Mode MOSFET
Features
100V/3.2A,RDS(ON)=145m@VGS=10V
100V/2.6A,RDS(ON)=160m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Application
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2354S23RG
54YW
SOT-23-3L
ϡʳ 54 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN2354S23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN2354
Alfa-MOS
Technology
AFN2354
100V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
100
±20
3.2
2.6
10
1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=3.2A
VGS=4.5V,ID=2.6A
VDS=20V,ID=1.5A
IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=4.5V
ID1.6A
VDS=50V,VGS=0V
f=1MHz
VDD=50V,RL=39
ID1.3A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
100 V
0.8 2.5
±100 nA
5
10 uA
5A
120
130
145
160
m
2S
0.85 1.2 V
5 10
1.5 nC
2.5
450
50 pF
25
45 60
35
25
55
40
ns
20 35
www.alfa-mos.com
Page 2



Alfa-MOS AFN2354
Alfa-MOS
Technology
Typical Characteristics
AFN2354
100V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
www.alfa-mos.com
Page 3







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