Mode MOSFET. AFN3400S Datasheet

AFN3400S MOSFET. Datasheet pdf. Equivalent

AFN3400S Datasheet
Recommendation AFN3400S Datasheet
Part AFN3400S
Description N-Channel Enhancement Mode MOSFET
Feature AFN3400S; Alfa-MOS Technology General Description AFN3400S, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN3400S Datasheet




Alfa-MOS AFN3400S
Alfa-MOS
Technology
General Description
AFN3400S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFN3400S
30V N-Channel
Enhancement Mode MOSFET
Features
30V/4.0A,RDS(ON)=42m@VGS=10V
30V/3.0A,RDS(ON)=44m@VGS=4.5V
30V/2.6A,RDS(ON)=50m@VGS=2.5V
Super high density cell design for extremely
low RDS (ON)
SOT-23-3L package design
Application
Power Management in Note book
LED Display
DC-DC System
LCD Panel
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3400SS23RG
0SYW
SOT-23-3L
ϡʳ 0S parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN3400SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.D Sep. 2010
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN3400S
Alfa-MOS
Technology
AFN3400S
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±16
4.0
3.0
15
1.7
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.D Sep. 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±16V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V ,ID=4.0A
VGS=4.5V,ID=3.0A
VGS=2.5V,ID=2.6A
VDS=10V,ID=6.1A
IS=1.7A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID2.6A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=15
ID1.0A,VGEN=10V
RG=6
Min. Typ Max. Unit
30 V
0.6 1.1
±100 nA
1
30 uA
30 A
26 42
28 44 m
34 50
20 S
0.8 1.2 V
3.0 4.5
1.6 nC
0.6
320
70 pF
30
8 12
12
15
18
30
ns
8 15
www.alfa-mos.com
Page 2



Alfa-MOS AFN3400S
Alfa-MOS
Technology
Typical Characteristics
AFN3400S
30V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.D Sep. 2010
www.alfa-mos.com
Page 3







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