Mode MOSFET. AFN3404S Datasheet

AFN3404S MOSFET. Datasheet pdf. Equivalent

AFN3404S Datasheet
Recommendation AFN3404S Datasheet
Part AFN3404S
Description N-Channel Enhancement Mode MOSFET
Feature AFN3404S; Alfa-MOS Technology General Description AFN3404S, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN3404S Datasheet




Alfa-MOS AFN3404S
Alfa-MOS
Technology
General Description
AFN3404S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFN3404S
30V N-Channel
Enhancement Mode MOSFET
Features
30V/5.5A,RDS(ON)=20m@VGS=10V
30V/5.0A,RDS(ON)=24m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOT-23-3L package design
Application
DC/DC Converters, High Speed Switching
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3404SS23RG
A4YW
SOT-23-3L
ϡʳ A4 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFN3404SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Aug. 2014
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFN3404S
Alfa-MOS
Technology
AFN3404S
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
5.5
4.4
25
1.5
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Aug. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=5.5A
VGS=4.5V,ID=5.0A
VDS=15V,ID=5.5A
IS=1.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID5.5A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=3.4
ID4.4A,VGEN=10V
RG=1
Min. Typ Max. Unit
30 V
1.0 2.5
±100 nA
1
10 uA
15 A
12
15
20
24
m
24 S
0.8 1.3 V
4.5 8.5
1.5 nC
1.5
450
120 pF
45
48
12
18
25
35
ns
7 15
www.alfa-mos.com
Page 2



Alfa-MOS AFN3404S
Alfa-MOS
Technology
Typical Characteristics
AFN3404S
30V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Aug. 2014
www.alfa-mos.com
Page 3







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