Mode MOSFET. AFP3415 Datasheet

AFP3415 MOSFET. Datasheet pdf. Equivalent

AFP3415 Datasheet
Recommendation AFP3415 Datasheet
Part AFP3415
Description P-Channel Enhancement Mode MOSFET
Feature AFP3415; Alfa-MOS Technology General Description AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFP3415 Datasheet




Alfa-MOS AFP3415
Alfa-MOS
Technology
General Description
AFP3415, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFP3415
20V P-Channel
Enhancement Mode MOSFET
Features
-20V/-4.9A,RDS(ON)=43m@VGS=4.5V
-20V/-3.4A,RDS(ON)=55m@VGS=2.5V
-20V/-2.2A,RDS(ON)=75m@VGS=1.8V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Application
Portable Equipment
Battery Powered System
Net Working System
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3415S23RG
15YW
SOT-23-3L
ϡʳ 15 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP3415S23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.C June 2011
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP3415
Alfa-MOS
Technology
AFP3415
20V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-20
±12
-4.9
-3.9
-10
-1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.C June 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V
TJ=85к
VDSЊˀ5V,VGS=-4.5V
VDSЊˀ5V,VGS=-2.5V
VGS=-4.5V,ID=-4.9A
VGS=-2.5V,ID=-3.4A
VGS=-1.8V,ID=-2.2A
VDS=-5V,ID=-3.6A
IS=-1.6A,VGS=0V
Qg
Qgs
Qgd
VDS=-10V,VGS=-2.5V
ID-4.0A
Ciss
Coss
Crss
VDS=-10V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-10V,RL=2.7
ID-3.7A,VGEN=-4.5V
RG=1
Min. Typ Max. Unit
-20 V
-0.4 -1.0
±100 nA
-1
-10 uA
-6
-4
A
31 43
41 55 m
59 75
10 S
-0.85 -1.2 V
10 18
2.5 nC
3.5
1050
165 pF
135
15 25
25
40
40
65
ns
15 25
www.alfa-mos.com
Page 2



Alfa-MOS AFP3415
Alfa-MOS
Technology
Typical Characteristics
AFP3415
20V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.C June 2011
www.alfa-mos.com
Page 3







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