Document
Alfa-MOS
Technology
General Description
AFP3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP3401S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-4.0A,RDS(ON)=65mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=80mΩ@VGS=-4.5V -30V/-1.0A,RDS(ON)=105mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3401SS23RG
3SYW
SOT-23-3L
ϡʳ 3S parts code ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP3401SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Te.