Mode MOSFET. AFP3401S Datasheet

AFP3401S MOSFET. Datasheet pdf. Equivalent

AFP3401S Datasheet
Recommendation AFP3401S Datasheet
Part AFP3401S
Description P-Channel Enhancement Mode MOSFET
Feature AFP3401S; Alfa-MOS Technology General Description AFP3401S, P-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFP3401S Datasheet




Alfa-MOS AFP3401S
Alfa-MOS
Technology
General Description
AFP3401S, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFP3401S
30V P-Channel
Enhancement Mode MOSFET
Features
-30V/-4.0A,RDS(ON)=65m@VGS=-10.0V
-30V/-3.2A,RDS(ON)=80m@VGS=-4.5V
-30V/-1.0A,RDS(ON)=105m@VGS=-2.5V
Super high density cell design for extremely
low RDS (ON)
SOT-23-3L package design
Application
Power Management in Note book
LED Display
DC-DC System
LCD Panel
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3401SS23RG
3SYW
SOT-23-3L
ϡʳ 3S parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP3401SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.B Sep. 2010
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP3401S
Alfa-MOS
Technology
AFP3401S
30V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-30
±12
-4.0
-3.2
-15
-1.5
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B Sep. 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TA=85к
VDSЉ-5V,VGS=-4.5V
VDSЉ-5V,VGS=-2.5V
VGS=-10.0V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
VGS=-2.5V,ID=-1.0A
VDS=-5V,ID=-2.8A
IS=-1.0A,VGS=0V
Qg
Qgs
Qgd
VDS=-15V,VGS=-10V
ID-4.0A
Ciss
Coss
Crss
VDS=-15V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-15V,RL=15
ID-1.0A,VGEN=-10V
RG=6
Min. Typ Max. Unit
-30 V
-0.6 -1.1
±100 nA
-1
-30 uA
-6
-3
A
55 65
65 80 m
82 105
6.5 S
-0.7 -1.3 V
10 18
1.6 nC
3.0
450
95 pF
55
8 18
8
25
18
50
ns
25 35
www.alfa-mos.com
Page 2



Alfa-MOS AFP3401S
Alfa-MOS
Technology
Typical Characteristics
AFP3401S
30V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.B Sep. 2010
www.alfa-mos.com
Page 3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)