Document
Alfa-MOS
Technology
General Description
AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP2379
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book LED Display DC-DC System LCD Panel
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2379S23RG
79YW
SOT-23-3L
ϡʳ 79 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP2379S23RG : 7” Tape & Reel ; Pb- Free ; Halogen-.