Mode MOSFET. AFP2379 Datasheet

AFP2379 MOSFET. Datasheet pdf. Equivalent

AFP2379 Datasheet
Recommendation AFP2379 Datasheet
Part AFP2379
Description P-Channel Enhancement Mode MOSFET
Feature AFP2379; Alfa-MOS Technology General Description AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Tr.
Manufacture Alfa-MOS
Datasheet
Download AFP2379 Datasheet




Alfa-MOS AFP2379
Alfa-MOS
Technology
General Description
AFP2379, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFP2379
60V P-Channel
Enhancement Mode MOSFET
Features
-60V/-3.6A,RDS(ON)=135m@VGS=-10V
-60V/-2.6A,RDS(ON)=150m@VGS=-4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
Application
Power Management in Note book
LED Display
DC-DC System
LCD Panel
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2379S23RG
79YW
SOT-23-3L
ϡʳ 79 parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP2379S23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP2379
Alfa-MOS
Technology
AFP2379
60V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-60
±20
-3.6
-2.6
-15
-1.5
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-48V,VGS=0V
VDS=-48V,VGS=0V
TJ=85к
VDSЉ-5V,VGS=-10V
VGS=-10V,ID=-3.6A
VGS=-4.5V,ID=-2.6A
VDS=-15V,ID=-2.2A
IS=-1.5A,VGS=0V
Qg
Qgs
Qgd
VDS=-30V,VGS=-4.5V
ID-2.2A
Ciss
Coss
Crss
VDS=-30V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-30V,RL=16.7
ID-1.8A,VGEN=-10V
RG=1
Min. Typ Max. Unit
-60 V
-1.0 -2.0
±100 nA
-1
-30 uA
-6 A
120
128
135
150
m
5S
-0.75 -1.3 V
5 10
1.5 nC
2.5
410
45 pF
20
5 10
15
20
25
35
ns
10 20
www.alfa-mos.com
Page 2



Alfa-MOS AFP2379
Alfa-MOS
Technology
Typical Characteristics
AFP2379
60V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Mar. 2012
www.alfa-mos.com
Page 3







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