Mode MOSFET. AFP2337S Datasheet

AFP2337S MOSFET. Datasheet pdf. Equivalent

AFP2337S Datasheet
Recommendation AFP2337S Datasheet
Part AFP2337S
Description P-Channel Enhancement Mode MOSFET
Feature AFP2337S; Alfa-MOS Technology General Description AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFP2337S Datasheet




Alfa-MOS AFP2337S
Alfa-MOS
Technology
General Description
AFP2337S, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-3L )
AFP2337S
100V P-Channel
Enhancement Mode MOSFET
Features
z -100V/-3.8A,RDS(ON)= 200m@VGS= -10V
z -100V/-2.6A,RDS(ON)= 210m@VGS= -4.5V
z Super high density cell design for extremely
low RDS (ON)
z SOT-23-3L package design
Application
z Active Clamp Circuits in DC/DC Power Supplies
Pin Define
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2337SS23RG
37SYW
SOT-23-3L
37S parts code
Y year code ( 0 ~ 9 )
W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
AFP2337SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2018
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP2337S
Alfa-MOS
Technology
AFP2337S
100V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-100
±20
-3.8
-2.6
-15
-5
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID= -250uA
VDS=VGS,ID= -250uA
VDS=0V,VGS= ±20V
VDS= -80V,VGS=0V
VDS= -80V,VGS=0V
TJ=85
VDS≧ -10V,VGS= -10V
VGS = -10V,ID=-3.8A
VGS = -4.5V,ID=-2.6A
VDS= -15V,ID= -3.2A
IS= -2A,VGS=0V
Qg
Qgs
Qgd
VDS=-50V,VGS=-4.5V
ID= -2.6A
Ciss
Coss
Crss
VDS=-50V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-50V,RL=17
ID-2.6A,VGEN=-10V
RG=1
Min.
-100
-1.0
-8
Typ
172
184
12
-0.8
12
3.0
4.5
1100
70
45
8
15
35
10
Max. Unit
-2.5
±100
-1
-30
200
210
-1.3
V
nA
uA
A
m
S
V
20
nC
pF
15
20
50
ns
25
www.alfa-mos.com
Page 2



Alfa-MOS AFP2337S
Alfa-MOS
Technology
Typical Characteristics
AFP2337S
100V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Jan. 2018
www.alfa-mos.com
Page 3







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