AFP2325S

Alfa-MOS Technology General Description AFP2325S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2325S 150V P-Channel Enhancement Mode MOSFET Features -150V/-1.4A,RDS(ON)=745mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2325SS23RG 25SYW SOT-23-3L ϡʳ 25S parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFP2325SS23RG : 7” Tape & Reel ; ...