60V MOSFET. HS50N06DA Datasheet

HS50N06DA MOSFET. Datasheet pdf. Equivalent

HS50N06DA Datasheet
Recommendation HS50N06DA Datasheet
Part HS50N06DA
Description N-channel 60V MOSFET
Feature HS50N06DA; N channel 60V MOSFET HS50N06DA 1. Description The HS50N06DA is the N-Channel logic enhancement mod.
Manufacture HOMSEMI
Datasheet
Download HS50N06DA Datasheet




HOMSEMI HS50N06DA
N channel 60V MOSFET
HS50N06DA
1. Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors
are produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance. These devices are particularly suited for
low voltage application such as LCD inverter, computer power management and DC to DC
converter circuits which need low in-line power loss.
2. Feature
RDS(ON)22mΩ@VGS=10V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and maximum DC
current capability
VDS
RDS(on)
ID
60
22
50
V
A
3. Pin configuration
Order Number
HS50N06DA
Package
TO-252
TO-252
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved.
Oct,2012-Ver1.0
www.homsemi.com
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HOMSEMI HS50N06DA
N channel 60V MOSFET
HS50N06DA
4. Absolute maximum ratings (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Tc=25
TC=70
Power Dissipation
TC=25
TC=70
Operating Junction and Storage Temperature Range
Symbol
VDSS
VDSS
ID
IDM
PD
TJ, Tstg
Limit
60
±20
50
35.1
140
60
38.5
-55 to 175
Unit
V
V
A
A
A
W
5. Thermal characteristics
Parameter
Thermal resistance, case to sink typ.
Thermal resistance junction to case.
Thermal resistance junction to ambient.
Symbol
RthCS
RthJC
RthJA
Ratings
0.5
2.1
110
Units
°C/W
°C/W
°C/W
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved.
Oct,2012-Ver1.0
www.homsemi.com
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HOMSEMI HS50N06DA
N channel 60V MOSFET
6. Electrical characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250μA
IGSS Gate-Body Leakage
VDS=0V, VGS=±20V
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V
RDS(ON) Drain-Source On-Resistance
VGS=10V, ID=50A
VSD Diode Forward Voltage
DYNAMIC
IS=50A, VGS=0V
Qg Total Gate Charge
VDD=48V, VGS=10V, ID=50A
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD=48V, VGS=4.5V, ID=50A
Qgd Gate-Drain Charge
Rg Gate Resistance
VDS=0V, VGS=0V, f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
VDS=15V, VGS=0V, f=1MHz
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VGS =10V, RL=30Ω
VDS=30V, RG=3.6Ω
tf Turn-Off Fall Time
HS50N06DA
Min Typ Max Unit
60 -- -- V
2 -- 4 V
-- -- ±100 nA
-- -- 1 μA
-- 17 22
-- 1 1.2 V
-- 37 --
-- 11 --
-- 15 --
-- 8 --
-- 2 --
-- 2270 --
-- 197 --
-- 62 --
-- 29 --
-- 5 --
-- 53 --
-- 6 --
Nc
Ω
pF
ns
Notes :a. pulse test:pulse width 300 us,duty cycle 2% ,Guaranteed by design,not subject to
production testing.
b. HOMSEMI mos reserves the right to improve product design,functions and reliability without
notice.
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved.
Oct,2012-Ver1.0
www.homsemi.com
3/5







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