HS50N06

HS50N06 N channel MOSFET 1.Description The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features „ RDS(ON)=19mΩ(typical) „ Ultra low gate charge (typical 30nC) „ Low reverse transfer capacitance „ Fast switching capability „ 100％ avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Coperight@ Guangz hou Chengq i Semiconductor Co.,LTD.All rights reserved. www.homsemi.com 1/5 HS50N06 N channel MOSFET 4. Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage Gate to source voltage Continuous drain current Drain current pulsed (note1) TJ=25 ºC TJ=100 ºC Single pulsed avalanche energy (note2) Repetitive avalanche energy (note1) Peak diode recovery dv/dt (note3) VDSS VGSS ID ID IDM EAS EAR dv/d...