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SiZ328DT Dataheets PDF



Part Number SiZ328DT
Manufacturers Vishay
Logo Vishay
Description Dual N-Channel MOSFETs
Datasheet SiZ328DT DatasheetSiZ328DT Datasheet (PDF)

www.vishay.com SiZ328DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration CHANNEL-1 CHANNEL-2 25 25 0.0150 0.0100 0.0250 0.0150 2.1 3.5 25.3 30 a Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs rati.

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www.vishay.com SiZ328DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration CHANNEL-1 CHANNEL-2 25 25 0.0150 0.0100 0.0250 0.0150 2.1 3.5 25.3 30 a Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • CPU core power • Computer / server peripherals • POL • Synchronous buck converter • Telecom DC/DC D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3 SiZ328DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (100 μs pulse width) Continuous source drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 25 25 +16, -12 +16, -12 25.3 30 a 20.2 25.5 11.1 b, c 15 b, c 8.9 b, c 12 b, c 40 50 12.6 13.5 2.4 b, c 3 b, c 7 11 2.5 6.1 15 16.2 9.6 10.4 2.9 b, c 3.6 b, c 1.8 b, c 2.3 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 TYP. MAX. CHANNEL-2 TYP. MAX. UNIT Maximum junction-to-ambient b, f Maximum junction-to-case (drain) t  10 s Steady state RthJA RthJC 35 43 28 35 6.7 8.3 6.3 7.7 °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W for channel-1 and 69 °C/W for channel-2 g. TC = 25 °C S19-0938-Rev. B, 04-Nov-2019 1 Document Number: 76059 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SiZ328DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b Dynamic a VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VGS = 0 V, ID = 250 μA ID = 250 μA ID = 250 μA ID = 250 μA ID = 250 μA VDS = VGS, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = +16 V, -12 V VDS = 0 V, VGS = +16 V, -12 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS = 25 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 5 A VGS = 10 V, ID = 5 A VGS = 4.5 V, ID = 5 A VGS = 4.5 V, ID = 5 A VDS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Input capacitance Ciss Output capacitance Reverse transfer capacitance Coss Crss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Gate-source charge Gate-drain charge VDS = 10 V, VGS = 10 V, ID = 5 A Qg VDS = 10 V, VGS = 10 V, ID = 5 A VDS = 10 V, VGS = 4.5 V, ID = 5 A VDS = 10 V, VGS = 4.5 V, ID = 5 A Qgs Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 5 A Qgd Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 5 A Output charge Qoss VDS = 10 V, VGS = 0 V Gate resistance Rg f = 1 MHz MIN. Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 25 25 1.1 1.1 10 10 - Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.28 0.18 TYP. MAX. UNIT 19 18 -4.1 -4.3 0.0120 0.0080 0.0175 0.0120 25 42 2.5 2.5 ± 100 ± 100 1 1 5 5 0.0150 0.0100 0.0250 0.0150 - V mV/°C V nA μA A  S 325 600 115 230 20 31 0.060 0.052 4.6 7.5 2.1 3.5 0.95 1.63 0.37 0.54 1.7 3.4 1.4 0.9 0.120 0.110 6.9 11.


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