N-Channel MOSFET. SiZ980DT Datasheet

SiZ980DT MOSFET. Datasheet pdf. Equivalent

SiZ980DT Datasheet
Recommendation SiZ980DT Datasheet
Part SiZ980DT
Description Dual N-Channel MOSFET
Feature SiZ980DT; www.vishay.com SiZ980DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRO.
Manufacture Vishay
Datasheet
Download SiZ980DT Datasheet




Vishay SiZ980DT
www.vishay.com
SiZ980DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
RDS(on) () (MAX.)
0.0067 at VGS = 10 V
0.0100 at VGS = 4.5 V
0.0016 at VGS = 10 V
0.0022 at VGS = 4.5 V
ID (A)
20 a
20 a
60 a
60 a
Qg (TYP.)
5.4 nC
21 nC
PowerPAIR® 6 x 5 G2
S2
S2
S2 6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
Ordering Information:
SiZ980DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
G1
• POL
N-Channel 1
• Synchronous buck converter MOSFET
• Telecom DC/DC
G2
N-Channel 2
MOSFET
D1
S1/D2
Schottky
Diode
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20 a
20 a
18.8 b, c
14.6 b, c
90
20 a
3.2 b, c
15
11.2
20
12.9
3.8 b, c
2.4 b, c
30
+20, -16
-55 to +150
260
60 a
60 a
43 b, c
34 b, c
130
55 a
4.1 b, c
25
31
66
42
5 b, c
3.2 b, c
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP.
MAX.
CHANNEL-2
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
RthJA
26
33
20
25
°C/W
Steady State
RthJC
4.7
6.2
1.5
1.9
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
S16-2419-Rev. C, 28-Nov-16
1
Document Number: 62976
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ980DT
www.vishay.com
SiZ980DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage c
(transient)
VDSt
VGS = 0 V, ttransient 1 μs
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
IGSS VDS = 0 V, VGS = +20 V, -16 V
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
Dynamic a
Input Capacitance
Output Capacitance
ID(on)
RDS(on)
gfs
Ciss
Coss
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 12 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, ID = 19 A
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss/Ciss Ratio
Crss Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 19 A
Qg
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 19 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 19 A
Output Charge
Qoss
VDS = 15 V, VGS = 0 V
Gate Resistance
Rg f = 1 MHz
MIN. TYP. MAX. UNIT
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30 -
-
30 -
-
36 -
-
36 -
-
1.2 -
2.2
1.1 -
2.2
- - ± 100
- - ± 100
-- 1
- 20 100
-- 5
- 100 1000
20 -
-
20 -
-
- 0.0047 0.0067
- 0.0011 0.0016
- 0.0065 0.0100
- 0.0016 0.0022
- 80
-
155 -
V
nA
μA
A
S
Ch-1
-
930
-
Ch-2
-
4600
-
Ch-1
Ch-2
-
-
325
1700
-
-
pF
Ch-1
-
21
-
Ch-2
-
115
-
Ch-1 - 0.023 0.046
Ch-2
0.025 0.050
Ch-1
-
12
18
Ch-2
-
51
77
Ch-1
5.4 8.1
Ch-2
-
23
35
Ch-1
-
3
-
nC
Ch-2
-
12.2
-
Ch-1
-
0.75
-
Ch-2
-
2.2
-
Ch-1
-
10
-
Ch-2
-
54
-
Ch-1 0.3
1.5
3
Ch-2 0.2
1
2
S16-2419-Rev. C, 28-Nov-16
2
Document Number: 62976
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ980DT
www.vishay.com
SiZ980DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Dynamic a
MIN. TYP. MAX. UNIT
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
15 30
35 70
65 130
75 150
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
td(off)
Channel-2
VDD = 15 V, RL = 1.5
Ch-1
-
10
20
Ch-2
-
30
60
ID 10 A, VGEN = 4.5 V, Rg = 1
Ch-1
-
10
20
tf
Ch-2
-
10
20
ns
Ch-1
-
10
20
td(on)
Channel-1
Ch-2
-
15
30
VDD = 15 V, RL = 1.5
Ch-1
-
25
50
tr ID 10 A, VGEN = 10 V, Rg = 1
Ch-2
-
21
40
Turn-Off Delay Time
Fall Time
td(off)
Channel-2
VDD = 15 V, RL = 1.5
Ch-1
-
15
30
Ch-2
-
32
60
ID 10 A, VGEN = 10 V, Rg = 1
Ch-1
-
10
20
tf
Ch-2
-
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current a
IS
ISM
TC = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
- 20
- 60
A
- 90
- 130
Body Diode Voltage
Ch-1
-
0.8 1.2
VSD IS = 10 A, VGS = 0 V
V
Ch-2
-
0.58 0.87
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Ch-1
trr
Ch-2
Channel-1
Ch-1
Qrr IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Ch-2
-
-
-
-
30 60
ns
50 100
11 20
nC
28 60
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Ch-1
-
18
-
ta Channel-2
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-2
-
28
-
ns
Ch-1
-
12
-
tb
Ch-2
-
22
-
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. Derived from UIS characterization data at time of product release. Production data log is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2419-Rev. C, 28-Nov-16
3
Document Number: 62976
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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