N-Channel MOSFETs. SiZ200DT Datasheet

SiZ200DT MOSFETs. Datasheet pdf. Equivalent

SiZ200DT Datasheet
Recommendation SiZ200DT Datasheet
Part SiZ200DT
Description Dual N-Channel MOSFETs
Feature SiZ200DT; www.vishay.com SiZ200DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PowerPAIR® 3 x 3S S2 .
Manufacture Vishay
Datasheet
Download SiZ200DT Datasheet




Vishay SiZ200DT
www.vishay.com
SiZ200DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PowerPAIR® 3 x 3S
S2
5
S2
6
S2
7
G2
8
S(P1/iDn
2
9)
D1
3.3 mm
1 3.3 mm
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
4
D1
3
D1
2
D1
1
G1
Bottom View
CHANNEL-1 CHANNEL-2
30 30
0.0055
0.0058
0.0073
0.0077
8.4 9.2
61 a
60 a
Dual
FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Optimized Qgs/Qgs ratio improves switching
characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAIR 3 x 3S
SiZ200DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (100 μs pulse width)
Continuous source drain diode current
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30 30
+20, -16
+20, -16
61 a
60 a
49 48
22 b, c
22 b, c
18 b, c
17 b, c
130 130
27 27
3.6 b, c
3.6 b, c
15 15
11 11
33 33
21 21
4.3 b, c
4.3 b, c
2.8 b, c
2.8 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP. MAX.
CHANNEL-2
TYP. MAX.
UNIT
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t 10 s
Steady state
RthJA
RthJC
23 29 23 29
3 3.8 3 3.8
°C/W
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 64 °C/W for channel-1 and 64 °C/W for channel-2
S19-0937-Rev. B, 11-Nov-2019
1
Document Number: 75033
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ200DT
www.vishay.com
SiZ200DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS Temperature coefficient
VGS(th) Temperature coefficient
Gate threshold voltage
Gate source leakage
Zero gate voltage drain current
On-state drain current b
Drain-source on-state resistance b
Forward transconductance b
Dynamic a
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = 250 μA
ID = 250 μA
ID = 250 μA
ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = +20 V, -16 V
VDS = 0 V, VGS = +20 V, -16 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
VGS = 4.5 V, ID = 7 A
VDS = 10 V, ID = 30 A
VDS = 10 V, ID = 30 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Gate-source charge
Gate-drain charge
VDS = 15 V, VGS = 10 V, ID = 10 A
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Output charge
Qoss
VDS = 15 V, VGS = 0 V
Gate resistance
Rg f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
30
30
-
-
-
-
1.1
1.1
-
-
-
-
-
-
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.28
0.2
TYP. MAX. UNIT
-
-
13
18
-5.2
-5.1
-
-
-
-
-
-
-
-
-
-
0.0045
0.0048
0.0057
0.0060
118
105
-
-
-
-
-
-
2.4
2.4
± 100
± 100
1
1
5
5
-
-
0.0055
0.0058
0.0073
0.0077
-
-
V
mV/°C
V
nA
μA
A
S
1510
1600
590
620
28
27
0.019
0.017
18.3
20
8.4
9.2
3.7
4.5
1
1
17
18
1.4
1
-
-
-
-
-
-
0.040
0.035
28
30
13
14
-
-
-
-
-
-
2.8
2
pF
nC
S19-0937-Rev. B, 11-Nov-2019
2
Document Number: 75033
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ200DT
www.vishay.com
SiZ200DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Dynamic a
Turn-on delay time
Rise time
td(on)
tr
Channel-1
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
11 20
11 20
5 10
5 10
Turn-off delay time
Fall time
Turn-on delay time
Rise time
td(off)
tf
td(on)
tr
Channel-2
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
Channel-1
VDD = 15 V, RL = 3
ID 5 A, VGEN = 4.5 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
23 45
23 45
5 10
5 10
ns
17 35
20 40
40 80
42 80
Turn-off delay time
Fall time
td(off)
tf
Channel-2
VDD = 15 V, RL = 3
ID 5 A, VGEN = 4.5 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
23 45
25 50
7 15
10 20
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t = 100 μs)
IS
ISM
TC = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
- 27
- 27
A
- 130
- 130
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
VSD
trr
Qrr
IS = 5 A, VGS = 0 V
IS = 5 A, VGS = 0 V
Channel-1
IF = 5 A, di/dt = 100 A/μs,
TJ = 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
0.8 1.2
V
0.8 1.2
35 70
ns
35 70
25 50
nC
25 50
Reverse recovery fall time
Reverse recovery rise time
ta
Channel-2
Ch-1
-
18
-
IF = 5 A, di/dt = 100 A/μs,
Ch-2
-
21
-
TJ = 25 °C
ns
Ch-1
-
17
-
tb
Ch-2
-
14
-
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width 300 μs, duty cycle 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0937-Rev. B, 11-Nov-2019
3
Document Number: 75033
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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