D-S MOSFET. ME4457 Datasheet

ME4457 MOSFET. Datasheet pdf. Equivalent

ME4457 Datasheet
Recommendation ME4457 Datasheet
Part ME4457
Description P-Channel 40-V (D-S) MOSFET
Feature ME4457; P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME4457 is the P-Channel logic enhancement mode p.
Manufacture Matsuki
Datasheet
Download ME4457 Datasheet




Matsuki ME4457
P-Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4457 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
ME4457/ME4457-G
FEATURES
RDS(ON)45mΩ@VGS=-10V
RDS(ON)68mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
(SOP-8)
Top View
* The Ordering Information: ME4457 (Pb-free)
ME4457-G (Green product-Halogen free)
Absolute Maximum(GrReeantpirnodgusct)(TA=25Unless Otherwise Noted)
Parameter
Symbol
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(Tj=150)
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
-40
±20
-5.9
-4.7
-24
2.5
1.6
-55 to 150
50
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
DCC
正式發行
Dec, 2015-Ver1.1
01



Matsuki ME4457
ME4457/ME4457-G
P-Channel 40-V (D-S) MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
-40
-1
V
-3 V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS Zero Gate Voltage Drain Current VDS=-40V, VGS=0V
±100
-1
nA
μA
RDS(ON)
Drain-Source On-State Resistance
VGS=-10V, ID= -10A
VGS=-4.5V, ID= -8A
37 45
mΩ
54 68
VSD Diode Forward Voltage
DYNAMIC
IS=-10A, VGS=0V
-0.9 -1.2 V
Qg Total Gate Charge
VDS=-20V, VGS=-10V, ID=-5A
21
Qg
Qgs
Qgd
Ciss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input capacitance
VDS=-20V, VGS=-4.5V, ID=-5A
10.5
5
4.5
911
nC
Coss
Output Capacitance
VDS=-15V, VGS=0V, f=1MHz
99
Crss
Reverse Transfer Capacitance
67
td(on)
Turn-On Delay Time
36
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=-15V, RL =15Ω
VGEN=-10V, RG=6Ω
15
58
tf Turn-On Fall Time
9
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
pF
ns
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Dec, 2015-Ver1.1
DCC
正式發行
02



Matsuki ME4457
P-Channel 40-V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME4457/ME4457-G
Dec, 2015-Ver1.1
DCC
正式發行
03







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)