D-S MOSFET. ME4456 Datasheet

ME4456 MOSFET. Datasheet pdf. Equivalent

ME4456 Datasheet
Recommendation ME4456 Datasheet
Part ME4456
Description N-Channel 40-V (D-S) MOSFET
Feature ME4456; N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME4456 is the N-Channel logic enhancement mode p.
Manufacture Matsuki
Datasheet
Download ME4456 Datasheet




Matsuki ME4456
N-Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4456 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
PIN CONFIGURATION
ME4456/ME4456-G
FEATURES
RDS(ON)24m@VGS=10V
RDS(ON)39m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
Load Switch
(SOP-8)
Top View
e Ordering Information: ME4456 (Pb-free)
ME4456-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150)*
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
* The device mounted on 1in2 FR4 board with 2 oz copper
Limit
40
±20
8
6.5
32
2.5
1.6
-55 to 150
50
June, 2009-Ver1.0
Apr, 2010-Ver1.0
Unit
V
V
A
A
W
℃/W
DCC
正式發行
01



Matsuki ME4456
N-Channel 40-V (D-S) MOSFET
ME4456/ME4456-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Total Gate Charge(10V)
Qg Total Gate Charge(4.5V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg Gate-Resistance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=40V, VGS=0V
VGS=10V, ID= 10A
VGS=4.5V, ID= 8A
IS=10A, VGS=0V
40 V
1 3V
±100
1
nA
μA
20 24
mΩ
31 39
0.9 1.2
V
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=4.5V, ID=6A
VDS=15V, VGS=0V, f=1.0MHz
VDS=0V, VGS=0V, f=1MHz
VDD=15V, RL =15Ω
VGEN=10V, RG=6Ω
15
7.8
3.4
3.8
539
76
24
0.9
13
13
37
4
nC
pF
Ω
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
June, 2009-Ver1.0
Apr, 2010-Ver1.0
DCC
正式發行
02



Matsuki ME4456
N-Channel 40-V (D-S) MOSFET
- Typical Characteristics (TJ =25Noted)
ME4456/ME4456-G
June, 2009-Ver1.0
Apr, 2010-Ver1.0
DCC
正式發行
03







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