D-S MOSFET. ME4174 Datasheet

ME4174 MOSFET. Datasheet pdf. Equivalent

ME4174 Datasheet
Recommendation ME4174 Datasheet
Part ME4174
Description N-Channel 30V (D-S) MOSFET
Feature ME4174; N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4174 is the N-Channel logic enhancement mode po.
Manufacture Matsuki
Datasheet
Download ME4174 Datasheet




Matsuki ME4174
N-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4174 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored
to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4174/ME4174-G
FEATURES
RDS(ON)6.2mΩ@VGS=10V
RDS(ON)11mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
* The Ordering Information: ME4174 (Pb-free)
ME4174-G (Green product-Halogen free )
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
The * *The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
30
±20
15.8
12.7
64
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
/W
DCC
正式發行
Dec, 2015-Ver1.2
01



Matsuki ME4174
N-Channel 30V (D-S) MOSFET
ME4174/ME4174-G
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol
STATIC
V(BR)DSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistance a
VSD Diode Forward Voltage
DYNAMIC
Qg Gate Charge
Qgt Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss
Input capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=30V, VGS=0V
VGS=10V, ID= 30A
VGS=4.5V, ID= 15A
IS=20A, VGS=0V
30 V
1.0 3.0 V
±100
1
nA
μA
5.2 6.2
mΩ
8.2 11
0.8 1.2
V
VDS=15V, VGS=10V, ID=25A
VDS=15V, VGS=4.5V, ID=25A
VDS=15V, VGS=0V, f=1MHz
VDS=15V, RL =15Ω
ID=1A, VGS=10V
RG=3Ω
37
19
8
9
1695
235
175
19
15
54
6.5
nC
pF
ns
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Dec, 2015-Ver1.2
DCC
正式發行
02



Matsuki ME4174
N-Channel 30V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME4174/ME4174-G
Dec, 2015-Ver1.2
DCC
正式發行
03







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