D-S MOSFET. ME4412-G Datasheet

ME4412-G MOSFET. Datasheet pdf. Equivalent

ME4412-G Datasheet
Recommendation ME4412-G Datasheet
Part ME4412-G
Description N-Channel 30-V (D-S) MOSFET
Feature ME4412-G; N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4412 is the N-Channel logic enhancement mode p.
Manufacture Matsuki
Datasheet
Download ME4412-G Datasheet




Matsuki ME4412-G
N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4412 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored
to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching , and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4412/ME4412-G
FEATURES
RDS(ON) 18 m@VGS=10V
RDS(ON) 30 m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load SwitchC
LCD Display inverter
e Ordering Information: ME4412 (Pb-free)
ME4412-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25
TA=70
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
*The device mounted on 1in2 FR4 board with 2 oz copper
Rating
30
±20
9.3
7.5
37
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
/W
DCC
正式發行
Dec, 2010-Ver1.0
01



Matsuki ME4412-G
N-Channel 30-V (D-S) MOSFET
ME4412/ME4412-G
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250 A
30
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250 A
1.0
3.0 V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
1A
RDS(ON)
Drain-Source On-State Resistance a
VGS=10V, ID= 10A
VGS=4.5V, ID= 5A
14 18
m
23 30
VSD Diode Forward Voltage
IS=2.3A, VGS=0V
0.76
1.1
V
DYNAMIC
Qg Gate Charge
VDS=15V, VGS=10V, ID=10A
16
Qgt Total Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=4.5V, ID=10A
8
nC
3.8
Qgd Gate-Drain Charge
3.3
Ciss Input capacitance
536
Coss
Output Capacitance
VDS=-15V, VGS=0V, f=1MHz
97 pF
Crss
Reverse Transfer Capacitance
31
Rg Gate Resistance
f =1MHz
0.9
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
VDD=25V, RL =25
ID=1A, VGEN=10V
RG=6
12
10
ns
40
6
Notes: a. Pulse test: pulse width 300us, duty cycle 2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Dec, 2010-Ver1.0
DCC
正式發行
02



Matsuki ME4412-G
N-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted)
ME4412/ME4412-G
Dec, 2010-Ver1.0
DCC
正式發行
03







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