Mode MOSFET. SSC8015GS6 Datasheet

SSC8015GS6 MOSFET. Datasheet pdf. Equivalent

SSC8015GS6 Datasheet
Recommendation SSC8015GS6 Datasheet
Part SSC8015GS6
Description P-Channel Enhancement Mode MOSFET
Feature SSC8015GS6; SSC8015GS6 P-Channel Enhancement Mode MOSFET  Features  VDS VGS -16V ±12V RDSon TYP 25mR@-4.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8015GS6
SSC8015GS6
P-Channel Enhancement Mode MOSFET
Features
VDS
VGS
-16V ±12V
RDSon TYP
25mR@-4V5
33mR@-2V5
ID
-4.5A
General Description
The SSC8015GS6 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
load switchand battery protection applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
Top View
Package Information
D: Drain; G: Gate; S: Source
SOT23
Unit:mm
SSC-1V0
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AFSEMI SSC8015GS6
SSC8015GS6
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Ratings
Drain-Source Voltage
VDSS
-16
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
VGSS
ID
IDM
±12
-4.5
3.8
-23
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
0.55
PD
0.35
Storage and Junction Temperature
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a
t10S
Steady-State
TJ TSTG
-55~150
Symbol
RJA
Typ
--
--
Max
183
225
Maximum Junction-to-Case
Steady-State
RJC
Electrical Characteristics @TA=25unless otherwise noted
--
109
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate-Source Leakage Current
V(BR)DSS
VGS = 0V, ID=-10uA
IDSS VDS = -16 V , VGS = 0V
IGSS VGS =±12 V , VDS = 0V
ON CHARACTERISTICS
-16 --
-- --
-- --
Gate Threshold Voltage
Drain-Source On-state Resistance
Forward Transconductance
VGS(th )
ID = -250 uA , VDS = VGS
RDS(on)
VGS = -4.5V ,ID =-3.5 A
VGS = -2.5V , ID = -3A
gFS VDS = -5V, ID = -3.5A
DYNAMIC CHARACTERISTICS
-0.4 -0.55
-- 25
-- 33
-- 9.2
Input Capacitance
Output Capacitance
Feedback Capacitance
Ciss
Coss
Crss
VDS = -4V , VGS = 0V
f = 1 MHz
SWITCHING CHARACTERISTICS
-- 757
-- 227
-- 184
Turn-on Delay Time
Turn-off Delay Time
td ( on )
VDD = -6V , RL = 6R,ID = -1.0A,
--
12
td( off )
VGEN = -4.5V, RG = 6R
-- 45
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
Is = -1.6A, VGS = 0V
a: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
-0.5 -0.75
b: Pulse width<380µs, Duty Cycle<2%
c: Maximum junction temperature TJ=150°C.
Unit
V
V
A
A
A
W
W
Units
°C/W
°C/W
°C/W
Max Unit
--
-1
±100
V
uA
nA
-0.9 V
45 mR
55 mR
-- S
-- pF
-- pF
-- pF
24 ns
73 ns
-1.2 V
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AFSEMI SSC8015GS6
Typical Performance Characteristics
20
V =-4.5V
GS
V =-3V
GS
15
V =-2.5V
GS
V =-2V
GS
10
5 V =-1.5V
GS
0
0123
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
4
2000
1600
1200
Ciss Ave(pF)
800
400 Coss Ave(pF)
Crss Ave(pF)
0
01234567
V , Drain-to-Source Voltage (V)
DS
Figure 3. Capacitance
8
1.0
0.8
0.6
0.4
0.2
0.0
-50
0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold vs. Temperature
SSC8015GS6
12
VDS=-5V
10
8
6 150oC
4 25oC
2 -55oC
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 4. On Resistance vs. Temperature
10
1
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V , Diode Forward Voltage (V)
SD
Figure 6. Diode Forward Characteristics
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