SSC8015GS6

SSC8015GS6 P-Channel Enhancement Mode MOSFET  Features  VDS VGS -16V ±12V RDSon TYP 25mR@-4V5 33mR@-2V5 ID -4.5A   General Description The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8015GS6  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Ratings Drain-Source Voltage VDSS -16 Gate-Source Voltage Continuous Drain Current a [email protected] TA = 25°C Continuous Drain Current a [email protected] TA = 70°C Plused Drain Current b VGSS ID IDM ±12 -4.5 3.8 -23 Power Dissipation a TC = 25°C Power Dissipation a TC = 70°C 0.55 PD 0.35 Storage and Junction Temperatur...