SSC8125GS6A

SSC8125GS6A P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5 ID ESD -4A 3kV  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View D  General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.  Package Information GS SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8125GS6A  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(1) Power Dissipation(1) Continuous Pulsed Junction and Storage Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings -20 ±8 -4 -20 450 -55 to +150  Electrical Characteristics @ TA = 25°C unless otherwise not...