Mode MOSFET. SSC8125GS6 Datasheet

SSC8125GS6 MOSFET. Datasheet pdf. Equivalent

SSC8125GS6 Datasheet
Recommendation SSC8125GS6 Datasheet
Part SSC8125GS6
Description P-Channel Enhancement Mode MOSFET
Feature SSC8125GS6; SSC8125GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDS.
Manufacture AFSEMI
Datasheet
Download SSC8125GS6 Datasheet




AFSEMI SSC8125GS6
SSC8125GS6
P-Channel Enhancement Mode MOSFET with ESD Protection
Features
VDS VGS
-20V ±8V
RDSon TYP
36mR@-4V5
45mR@-2V5
57mR@-1V8
66mR@-1V5
ID ESD
-4A 3kV
Applications
Load Switch
Portable Devices
DCDC Conversion
Pin configuration
Top View
D
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) , low gate charge and operation with
gate voltages as low as 1.5V and it is protected from
ESD. These feathures make it suitable for use as a load
switch or in PWM applications.
Package Information
GS
SOT23
Unit:mm
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AFSEMI SSC8125GS6
SSC8125GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current(1)
Power Dissipation(1)
Continuous
Pulsed
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
-20
±8
-4
-20
450
-55 to +150
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter(2)
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = -250uA
Zero Gate Voltage Drain Curren
VDS = -20V, VGS = 0V
IDSS
TJ=55°C
Gate-Body Leakage
IGSS VGS = ±8V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250uA
Static Drain-Source On-Resistance
RDS (ON)
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID = -3A
VGS = -1.8V, ID = -2A
VGS = -1.5V, ID = -1A
Forward Transconductance
GFS VDS =-5V, ID = -4A
Diode Forward Voltage
VSD VGS = 0V, ISD = 1.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -10V, VGS = 0V
F = 1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain
QG
QGS
QGD
VDS=-10V, ID=-4A,
VGS=5V
Turn-On Delay Time
Turn-Off Delay Time
TD(ON)
TD(OFF)
VGS = -5V, VGS = -10V
RL = 1.5R ,RGEN = 3R
Min Typ
-20 --
-- --
-- --
-0.4 -0.6
-- 36
-- 45
-- 57
-- 66
-- 16
0.7
-- 418
-- 136
-- 56
-- 9
-- 2.9
-- 3.6
-- --
-- --
Unit
V
V
A
mW
°C
Max Unit
-- V
-1
uA
-5
±10 uA
-0.9 V
41
52
mR
62
72
-- S
1.3 V
--
-- pF
--
--
-- nC
--
18
ns
70
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
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AFSEMI SSC8125GS6
Typical Performance Characteristics
25
V =-8V
GS
V =-4.5V
GS
20 V =-2.5V
GS
V =-2V
GS
15
10
V =-1.5V
GS
5
0
01234
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
5
600
500
400 Ciss Ave(pF)
300
200
Coss Ave(pF)
100 Crss Ave(pF)
0
0 5 10 15
V , Drain-to-Source Voltage (V)
DS
Figure 3. Capacitance
20
SSC8125GS6
10
VDS=-5V
8
6
4
150oC
2
25oC
0
0.0 0.4 0.8 1.2 1.6 2.0
V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 4. On Resistance vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.0
-50
0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold vs. Temperature
10
1
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V , Body Diode Forward Voltage (V)
SD
Figure 6. Diode Forward Characteristics
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