Mode MOSFET. SSC8039GT3 Datasheet

SSC8039GT3 MOSFET. Datasheet pdf. Equivalent

SSC8039GT3 Datasheet
Recommendation SSC8039GT3 Datasheet
Part SSC8039GT3
Description P-Channel Enhancement Mode MOSFET
Feature SSC8039GT3; SSC8039GT3 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 2.
Manufacture AFSEMI
Datasheet
Download SSC8039GT3 Datasheet




AFSEMI SSC8039GT3
SSC8039GT3
P-Channel Enhancement Mode MOSFET
Features
VDS
-30V
VGS
±20V
RDSon TYP
15mR@-10V
20mR@-4V5
ID
-11A
Applications
Load Switch
DCDC conversion
NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
SSC-1V0
http://www.afsemi.com
1/5
Analog Future



AFSEMI SSC8039GT3
SSC8039GT3
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(1)
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
30
±20
11
28
2.5
-55 to +150
Unit
V
V
A
W
°C
Electrical Characteristics @TA = 25unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(TH)
Drain–Source On–State Resistance
RDS(ON)
Forward Transconductance
Input Capacitance
GFS
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Turn–On Delay Time
TD(ON)
Turn–Off Delay Tim
TD(OFF)
Diode Forward Voltage
VSD
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2.
Test Conditions
VGS = 0 V, ID = -250uA
VDS = -30 V, VGS = 0 V
VGS = ± 20 V, VDS = 0 V
VDS = VGS, ID =-250uA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -7A
VDS = -5 V, ID = -10 A
VDS = 20V, VGS = 0V,
f = 1MHz
VGS=-10VVDS=-15V,
RL=1.5R, RGEN=3R
VGS = 0 V, IS = -2 A
Min Typ Max
-30 --
--
-- -- -1
-- ±1.5 ±100
-1 -1.3 -3
-- 15 20
-- 20 35
-- 18 --
-- 2000 --
-- 550 --
-- 800 --
-- 8.6 --
-- 39 --
-- -0.75 -1.2
Unit
V
uA
nA
V
mR
S
pF
nS
V
SSC-1V0
http://www.afsemi.com
2/5
Analog Future



AFSEMI SSC8039GT3
Typical Performance Characteristics
30
VGS=4.0,4.5,5,6,7,8,9,10V
25 VGS=3.5V
20
VGS=3.0V
15
10 VGS=2.5V
5
VGS=2.0V
0
0 VD1S, Drai2n-Sourc3e Volta4ge (V)5
6
Fig1. Drain current vs Drain voltage
50
40
30
VGS=4.5V
20
10 VGS=10V
0
0 4 8 12 16
ID, Drain Current (A)
Fig3. On-resistance vs. ID
50
20
40
30
20
10
0
2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage (V)
Fig5. On-resistance vs. Gate-Source Voltage
SSC8039GT3
30
25
20
15
10 VDS=3.0V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-source Voltage(V)
Fig2. Transfer Characteristics
4.0
2800
2400
2000
Ciss
f=1MHz
1600
1200
Crss
800
Coss
400
0
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Fig4. Capacitance vs. VDS
1.5
30
1.4
VGS=VDS,ID=250uA
1.3
1.2
1.1
1.0
-25
0 25 50 75 100 125 150
Tj, Junction Temperature (oC)
Figure6. Threshold vs Temperature
SSC-1V0
http://www.afsemi.com
3/5
Analog Future







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)