Mode MOSFET. SSC8039GS1 Datasheet

SSC8039GS1 MOSFET. Datasheet pdf. Equivalent

SSC8039GS1 Datasheet
Recommendation SSC8039GS1 Datasheet
Part SSC8039GS1
Description P-Channel Enhancement Mode MOSFET
Feature SSC8039GS1; SSC8039GS1 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 2.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8039GS1
SSC8039GS1
P-Channel Enhancement Mode MOSFET
Features
VDS
-30V
VGS
±20V
RDSon TYP
15mR@-10V
20mR@-4V5
ID
-10A
Applications
Load Switch
DCDC conversion
NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
⑥⑤
② ③④
SOP8
Unit:mm
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AFSEMI SSC8039GS1
SSC8039GS1
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Limit
-30
±20
-10
-50
3
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @TA = 25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
V(BR)DSS
VGS = 0 V, ID = -250uA
-30 --
IDSS
VDS = -30 V, VGS = 0 V
-- --
IGSS VGS = ± 20 V, VDS = 0 V -- --
ON CHARACTERISTICS
Gate Threshold Voltage
Drain–Source On–State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID =-250uA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -7A
-1 -1.3
-- 15
-- 20
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GFS VDS = -5 V, ID = -10 A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
VDS = 20V, VGS = 0V,
f = 1MHz
-- 18
-- 2000
-- 550
-- 800
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Turn–Off Delay Tim
TD(ON)
TD(OFF)
VGS=-10VVDS=-15V,
RL=1.5R, RGEN=3R
--
--
8.6
39
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD VGS = 0 V, IS = -1 A
-- -0.75
Max
--
-1
±100
-3
20
35
--
--
--
--
--
--
-1.6
Unit
V
uA
nA
V
mR
S
pF
nS
V
Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
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AFSEMI SSC8039GS1
Typical Performance Characteristics
30
VGS=4.0,4.5,5,6,7,8,9,10V
25 VGS=3.5V
20
VGS=3.0V
15
10 VGS=2.5V
5
VGS=2.0V
0
0 VD1S, Drai2n-Sourc3e Volta4ge (V)5
6
Fig1. Drain current vs Drain voltage
50
40
30
VGS=4.5V
20
10 VGS=10V
0
0 4 8 12 16
ID, Drain Current (A)
Fig3. On-resistance vs. ID
50
20
40
30
20
10
0
2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage (V)
Fig5. On-resistance vs. Gate-Source Voltage
SSC8039GS1
30
25
20
15
10 VDS=3.0V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-source Voltage(V)
Fig2. Transfer Characteristics
4.0
2800
2400
2000
Ciss
f=1MHz
1600
1200
Crss
800
Coss
400
0
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Fig4. Capacitance vs. VDS
1.5
30
1.4
VGS=VDS,ID=250uA
1.3
1.2
1.1
1.0
-25
0 25 50 75 100 125 150
Tj, Junction Temperature (oC)
Figure6. Threshold vs Temperature
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