P-Channel Enhancement Mode MOSFET
SSC8039GS1
P-Channel Enhancement Mode MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
...
Description
SSC8039GS1
P-Channel Enhancement Mode MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
Applications
Load Switch
DCDC conversion NB battery
Pin configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8039GS1
Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
ID
PD TJ, TSTG
Limit -30 ±20 -10...
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