Mode MOSFET. SSC8037GT8 Datasheet

SSC8037GT8 MOSFET. Datasheet pdf. Equivalent

SSC8037GT8 Datasheet
Recommendation SSC8037GT8 Datasheet
Part SSC8037GT8
Description P-Channel Enhancement Mode MOSFET
Feature SSC8037GT8; SSC8037GT8 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 27mR@-10V 3.
Manufacture AFSEMI
Datasheet
Download SSC8037GT8 Datasheet




AFSEMI SSC8037GT8
SSC8037GT8
P-Channel Enhancement Mode MOSFET
Features
VDS
-30V
VGS
±20V
RDSon TYP
27mR@-10V
39mR@-4V5
ID
-8A
Applications
Load Switch
DCDC conversion
NB battery
Pin Configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
SSC-1V0
Units:mm
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AFSEMI SSC8037GT8
SSC8037GT8
Absolute Maximum Ratings @TA = 25unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, TSTG
Limit
-30
±20
-8
-30
2.5
-55 to 150
Unit
V
V
A
A
W
°C
Electrical Characteristics @TA = 25unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Body Leakage Current
Zero Gate Voltage Drain Current
Drain–Source On–State
Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
GFS
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = -250uA
VDS = VGS, ID =-250uA
VGS = ± 20 V, VDS = 0 V
VDS = -24 V, VGS = 0 V
VGS = -10 V, ID = -6A
VGS = - 4.5 V, ID = -5 A
VDS = -5 V, ID = -4 A
VGS = 0 V, IS = -1 A
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
VDS = -15 V, RL = 2.5R,
VGS = -10V, RGEN=3R
Min Typ Max Unit
-30 --
-- V
-1 -1.5 -3
V
-- -- ±100 nA
-- -- -1 uA
-- 27 35
mR
-- 39 50
-- 12 -- S
-- -0.77 -1.5 V
-- 950 --
-- 137 -- pF
-- 118 --
-- -- 18
nS
-- -- 70
Note:
1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-1V0
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AFSEMI SSC8037GT8
SSC8037GT8
P-channel Typical Performance Characteristics
10
9 VGS=4.0,4.5V
VGS=3.0V
8
7 VGS=2.8V
6
5 VGS=2.4V
4
3
2
1 VGS=2.0V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS, Drain-Source Voltage (V)
Fig1. Output Characteristics
4.0
1400
1200
1000
Ciss Ave(pF)
800
600
400 Coss Ave(pF)
200
Crss Ave(pF)
0
0 5 10 15
VDS, Drain-to-Source Voltage (V)
Fig3. Capacitance
20
10
9 VDS=1.0V
85oC
8
7 25oC
6 125oC
5
4
3
2
1 -25oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-source Voltage(V)
Fig2. Transfer Characteristics
50
45
40
35
30 VGS=4.5V
25
20 VGS=10V
15
10
5
0
-50 -25 0 25 50 75 100 125
Tj, Junction Temperature (oC)
Fig4. On Resistance Vs. Temperature
150
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature (oC)
Fig5. Gate Threshold Vs. Temperature
10
1
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Body Diode Forward Voltage (V)
Fig6. Diode Forward Characteristics
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