Mode MOSFET. SSC8035GS6 Datasheet

SSC8035GS6 MOSFET. Datasheet pdf. Equivalent

SSC8035GS6 Datasheet
Recommendation SSC8035GS6 Datasheet
Part SSC8035GS6
Description P-Channel Enhancement Mode MOSFET
Feature SSC8035GS6; SSC8035GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 51mR@-10V ID  Appli.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8035GS6
SSC8035GS6
P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
51mR@-10V
ID
Applications
Load Switch
Portable Devices
DCDC conversion
-30V ±12V
60mR@-4V5
98mR@-2V5
-4A
Pin configuration
General Description
Top View
This device is particularly suited for low voltage
application such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package Excellent thermal and
electrical capabilities.
Package Information
①②
SOT23
Units:mm
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AFSEMI SSC8035GS6
SSC8035GS6
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Maximum Drain Current – Continuous
ID
– Pulsed
IDM
Continuous Power Dissipation
PD
Operating and Storage Temperature Range
TJ,TSTG
Ratings
-30
±12
-4
-17
250
-55 to 150
Unit
V
V
A
mW
Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol
Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250μA
-30 -- -- V
Zero Gate Voltage Drain Current
IDSS VDS = -30V, VGS =0V
-- -- -1 µA
Gate - Body Leakage, Forward
IGSSF
VGS = -12V
-- -- -100 nA
Gate - Body Leakage, Reverse
IGSSR
VGS =12V
-- -- 100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS (TH)
VDS = VGS, ID = -250µA
-0.7 -1.0 -1.3
V
VGS = -10V, ID = -4.2A
-- 51 65
Static Drain-Source On-Resistance
RDS(ON)
VGS = -4.5V, ID = -4A
-- 60 75 mR
VGS = -2.5V, ID = -1A
-- 98 120
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -30V, VGS = 0V,
F = 200KHz
-- 600 --
-- 85 --
-- 66 --
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-on Delay Time
TD ( ON )
-- 6.5 --
Rise Time
Turn-off Delay Time
TR
TD( OFF )
VGS=-10V, VDS=-15V,
RL=3.6R,RGEN=6R
-- 3.5 --
-- 40 --
ns
Fall Time
TF
-- 13 --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = -1A
-- -0.78 -1
V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board
design.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
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AFSEMI SSC8035GS6
SSC8035GS6
Typical Performance Characteristics
25
VGS=-10.0V
VGS=-3.0V
20
VGS=-4.5V
15
VGS=-2.5V
10
5
VGS=-2.0V
0
012345
VDS, Drain-Source Voltage (V)
Figure 1. Output Characteristics
500
VGS=2.5V
400
VGS=3.0V
300
12
VDS=5V
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, Gate-to-source Voltage(V)
Figure 2. Transfer Characteristics
1000
800
600 Ciss
200 VGS=3.5V
VGS=4.5V
100
VGS=10.0V
0
0 5 10 15 20 25
ID, Drain Current (A)
Figure 3. On Resistance vs. Drain Current
400
200
Coss
Crss
0
0
5
10 15
VDS, Drain-Source Voltage (V)
Figure 4. Capacitance
20
110 10
100
90 VGS=-2.5V ID=-1A
80 VGS=-4.5V ID=-4A
70
60
50 VGS=-10V ID=-4.2A
40
8
6
4
30
20 2
10
0
-25 0 25 50 75 100 125 150
Tj Junction Temperature (oC)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VDS, Drain-Source Voltage (V)
Figure 5 . On resistance vs. Temperature Figure 6. Diode Forward Characteristics
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