Mode MOSFET. SSC8023GS6 Datasheet

SSC8023GS6 MOSFET. Datasheet pdf. Equivalent

SSC8023GS6 Datasheet
Recommendation SSC8023GS6 Datasheet
Part SSC8023GS6
Description P-Channel Enhancement Mode MOSFET
Feature SSC8023GS6; SSC8023GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 7.
Manufacture AFSEMI
Datasheet
Download SSC8023GS6 Datasheet




AFSEMI SSC8023GS6
SSC8023GS6
P-Channel Enhancement Mode MOSFET
Features
VDS
-20V
VGS
±12V
RDSon TYP
60mR@-4V5
75mR@-2V5
ID
-3A
Applications
Load Switch
Portable Devices
DCDC conversion
Pin configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
D: Drain; G: Gate; S: Source
SOT23
Unit:mm
SSC-1V0
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AFSEMI SSC8023GS6
SSC8023GS6
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous)
ID
Drain Current (Pulse)
IDM
Power Dissipation
25
70
PD25
PD70
Operating Temperature/ Storage Temperature
TJ//TSTG
Ratings
-20
±12
-3
-20
550
350
-55~150
Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID=-250uA
-20 --
Drain Cut-off Current
IDSS
VDS = -20 V , VGS = 0V
-- --
Gate-Source Leakage Current
IGSS
VGS =±12 V , VDS = 0V
-- --
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th )
ID = -250 uA , VDS = VGS
-0.45 -0.75
Drain-Source On-state Resistance
RDS(on)
VGS = -4.5V ,ID =-2.8 A
VGS = -2.5V , ID = -2A
-- 60
-- 75
Forward Transconductance
gFS
VDS = -5V, ID = -2.8A
-- 6.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
Ciss -- 415
VDS = -6V , VGS = 0V
Coss
-- 223
f = 1 MHz
Crss -- 87
SWITCHING CHARACTERISTICS
Turn-on Delay Time
td ( on )
VDD = -6V , RL = 6R,ID = -1.0A,
--
13
Turn-off Delay Time
td( off )
VGEN = -4.5V, RG = 6R
-- 42
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
Is = -1.6A, VGS = 0V
-0.5 --
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test: PW≤300us, duty cycle≤2%.
3. For design AID only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
Unit
V
V
A
A
mW
Max Unit
--
-1
±100
V
uA
nA
-1.5 V
105 mR
200 mR
-- S
-- pF
-- pF
-- pF
25 ns
70 ns
-1.2 V
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AFSEMI SSC8023GS6
Typical Performance Characteristics
10
-VGS=3.0, 3.5, 4.0, 4.5, 5.0V
8 -VGS=2.5V
SSC8023GS6
10 -55oC 25oC 85oC 125oC 150oC
8
6 -VGS=2.0V
4 -VGS=1.8V
2 -VGS=1.5V
0 -VGS=1.0V
012345
-VDS, Drain-Source Voltage (V)
Figure 1. Output Characteristics
6
4
2
0 -VDS=1.0V
0 2 4 6 8 10
-VGS, Gate-to-source Voltage(V)
Figure 2. Transfer Characteristics
700
600
500 Ciss Ave(pF)
400
300
200 Coss Ave(pF)
100
0
0
Crss Ave(pF)
5 10 15
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
20
100
80
VGS= -4.5V, ID= -3A
60
VGS= -8V, ID= -3A
40
20
-40
0
40 80 120 160
Tj, Junction Temperature(oC)
Fig 4. On-Resistance Temperature Coefficient
1.0 10
0.9
0.8
0.7 1
0.6
0.5
0.4
-100
-50 0
Tj, Junction
50 100
Temperature
(1oC50)
200
Figure 5. Gate Thershold Vs. Temperature
0.1
0.0 0.5 1.0 1.5 2.0
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Vs. Source Current
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